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Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

Published online by Cambridge University Press:  31 January 2011

Cao Zexian
Cao Zexian*
Affiliation:
National Laboratory for Surface Physics, Institute of Physics, P.O. Box 603, Beijing, 100080 People's Republic of China
*
a) e-mail: [email protected]
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Abstract

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3034 - 3037
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Amorphous Carbon: State of the Art, edited by Silva, S.R.P., Robertson, J., Milne, W.I.. and Jamaratunga, G.A.. (World Scientific, Singapore, 1998).CrossRefGoogle Scholar
2.Lifshitz, Y., Lempert., G.D., and Grossman, E., Phys. Rev. Lett. 72/17, 2753 (1994).CrossRefGoogle Scholar
3.Mathews, A. and Eskildsen., S.S., Diamond Relat. Mater. 3, 902 (1994).CrossRefGoogle Scholar
4.Lifshitz, Y., Diamond Relat. Mater. 8, 1659 (1999).CrossRefGoogle Scholar
5.Lifshitz, Y., Diamond Relat. Mater. 5, 388 (1996).CrossRefGoogle Scholar
6.Zexian, C., Diamond Relat. Mater. 9, 1881 (2000).CrossRefGoogle Scholar
7.Lifshitz, Y., Kasi., S.R., and Rabalais., J.W., Phys. Rev. B 41, 10468 (1989).CrossRefGoogle Scholar
8.Davis., C.A., Thin Solid Films 226, 30 (1993).CrossRefGoogle Scholar
9.Brenner., S.A. and Senderoff, S., J. Res. Natl. Bur. Stand. 42, 105 (1949).CrossRefGoogle Scholar