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Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding

Published online by Cambridge University Press:  31 January 2011

K.T. Miller  and
F.F. Lange
K.T. Miller
Affiliation:
Department of Materials, College of Engineering, University of California, Santa Barbara, California 93106
F.F. Lange
Affiliation:
Department of Materials, College of Engineering, University of California, Santa Barbara, California 93106
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Abstract

A two-step process has been developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings. This processing method utilizes current polycrystalline thin film deposition techniques. In this method, a polycrystalline thin film is first deposited and heat treated to promote its breakup into isolated grains. The breakup process favors those grains that have a low substrate interfacial energy and so produces a film of highly oriented but isolated grains. In the second process step, another polycrystalline thin film is deposited. The remnant grains act as seeds for the growth of a highly oriented thin film. The process is demonstrated through the growth of highly (100) oriented thin films of cubic ZrO2 (25 mol % Y2O3) on (0001) Al2O3 single crystal substrates, a material system in which film and substrate have dissimilar structures and interatomic spacings. Implications for the growth of epitaxial films using this method are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 11 , November 1991 , pp. 2387 - 2392
Copyright
Copyright © Materials Research Society 1991

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