Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-22T22:12:15.099Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of icosahedral quasicrystal by crystallization of Zr70(Ni, Cu, Pd)30 amorphous alloys

Published online by Cambridge University Press:  31 January 2011

T. Zhang ,
A. Inoue ,
M. Matsushita  and
J. Saida
T. Zhang*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
A. Inoue
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
M. Matsushita
Affiliation:
Inoue Superliquid Glass Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, Sendai 982-0807, Japan
J. Saida
Affiliation:
Inoue Superliquid Glass Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, Sendai 982-0807, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

An icosahedral phase was found to be formed as a primary precipitation phase in the crystallization process of binary Zr70Pd30, ternary Zr70Ni30−xPdx, and Zr70Cu30−xPdx (x = 10 and 20 at.%) and quaternary Zr70Ni10Cu10Pd10 amorphous alloys. The maximum volume fraction of the icosahedral phase was nearly 100% for the 20% Pd alloys and the grain size tended to decrease in the range from 40 to 70 nm with increasing Pd content. No icosahedral phase was formed in the Zr–Ni–Cu alloys without Pd, and hence, the addition of Pd was concluded to be essential for the formation of the icosahedral phase in the Zr-based amorphous alloys. It also was noticed that the icosahedral phase was formed even in the binary Zr70Pd30 amorphous alloy. The icosahedral phase was in a metastable state and changes to equilibrium crystalline phases by annealing in the higher temperature range. The finding of the formation of the icosahedral phase in the binary alloy system allowed us to predict the future appearance of a number of icosahedral base alloys in other alloy systems.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 20 - 23
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Shechtman, D., Blech, I., Gratias, D., and Cahn, J.W., Phys. Rev. Lett. 53, 1951 (1984).CrossRefGoogle Scholar
2.Levine, D. and Steinhardt, P.J., Phys. Rev. Lett. 53, 2477 (1984).CrossRefGoogle Scholar
3.Takeuchi, S., in Quasicrystals (Sangyotosho, Tokyo, 1992), p. 125.Google Scholar
4.In New Horizons in Quasicrystals, edited by Goldman, A.I., Sordelet, D.J., Rhiel, P.A., and Dubois, J.M. (World Scientific, Singapore, 1997), p. 1.CrossRefGoogle Scholar
5.In Proceedings of the 6th International Conference on Quasicrystals, edited by Takeuchi, S. and Fujiwara, T. (World Scientific, Singapore, 1998), p. 2530.Google Scholar
6.Poon, S.J., Drehman, A.J., and Lawless, K.R., Phys. Rev. Lett. 55, 2324 (1985).CrossRefGoogle Scholar
7.Kimura, H.M., Inoue, A., Bizen, Y., and Masumoto, T., Mater. Sci. Eng. 99, 449 (1988).CrossRefGoogle Scholar
8.Tsai, A.P., Inoue, A., Bizen, Y., and Masumoto, T., Acta Metall. Mater. 37, 1443 (1989).CrossRefGoogle Scholar
9.Köster, U., Meinhardt, J., Roos, S., and Liebertz, H., Appl. Phys. Lett. 69, 179 (1996).CrossRefGoogle Scholar
10.Eckert, J., Mattern, N., Zinkevitch, M., and Seidel, M., Mater. Trans. JIM 39, 623 (1998).CrossRefGoogle Scholar
11.Murty, B.S., Ping, D.H., Hono, K., and Inoue, A., Appl. Phys. Lett. 76, 55 (2000).CrossRefGoogle Scholar
12.Inoue, A., Zhang, T., and Masumoto, T., Mater. Trans. JIM 31, 177 (1990).CrossRefGoogle Scholar
13.Inoue, A., Shibata, T., and Zhang, T., Mater. Trans. JIM 36, 1420 (1995).CrossRefGoogle Scholar
14.Chen, M.W., Zhang, T., Inoue, A., Sakai, A., and Sakurai, T., Appl. Phys. Lett. 75, 1697 (1999).Google Scholar
15.Inoue, A., Zhang, T., Saida, J., Matsushita, M., Chen, M.W., and Sakurai, T., Mater. Trans. JIM 40, 1181 (1999).CrossRefGoogle Scholar
16.Inoue, A., Zhang, T., Saida, J., Matsushita, M., Chen, M.W., and Sakurai, T., Mater. Trans. JIM 40, 1137 (1999).Google Scholar
17.Inoue, A., Zhang, T., Chen, M.W., and Sakurai, T., Mater. Trans. JIM 40, 1382 (1999).CrossRefGoogle Scholar
18.Inoue, A., Zhang, T., Chen, M.W., Sakurai, T., Saida, J., and Matsushita, M., J. Mater. Res. 15, 2195 (2000).CrossRefGoogle Scholar
19.Matsushita, M., Saida, J., Li, C., and Inoue, A., J. Mater. Res. 15, 1280 (2000).CrossRefGoogle Scholar
20.Saida, J., Matsushita, M., Li, C., and Inoue, A., Appl. Phys. Lett. 76, 3558 (2000).CrossRefGoogle Scholar