Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-26T17:08:54.618Z Has data issue: false hasContentIssue false

Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259, Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259, Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Keisuke Saito
Affiliation:
Application Laboratory, Analytical Department, Philips Japan, Ltd., 35-1, Sagamiono 7-chome, Sagamihara-shi 228-0803, Japan
Get access

Abstract

The orientation dependence of the ferroelectricity of epitaxially grown Bi4Ti3O12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi4Ti3O12 films were epitaxially grown on (100)cCaRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 mC/cm2 and 15 kV/cm, 16.5 νC/cm2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (PS) was 4.0 νC/cm2 and 27.0 νC/cm2 for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi2Ta2O9 in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated PS values along the c and a axes of Bi4Ti3O12 were 4.0 and 48.4 νC/cm2, respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 1010 switching cycles measured with 500 kHz rectangular pulses.

Type
Articles
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M.C., and Scott, J.F., Nature 374, 627 (1995).CrossRefGoogle Scholar
2.Ishikawa, K. and Funakubo, H., Appl. Phys. Lett. 75, 1970 (1999).CrossRefGoogle Scholar
3.Ishikawa, K., Saito, K., Suzuki, T., Nishi, Y., Fujimoto, M., and Funakubo, H., J. Appl. Phys. 87, 8018 (2000).CrossRefGoogle Scholar
4.Cummins, S.E. and Cross, L.E., J. Appl. Phys. 39, 2268 (1968).CrossRefGoogle Scholar
5.Takenaka, T. and Sakata, K., Jpn. J. Appl. Phys. 19, 31 (1980).CrossRefGoogle Scholar
6.Ramesh, R., Luther, K., Wilkens, B., Hart, D.L., Wang, E., and Trascon, J.M., Appl. Phys. Lett. 57, 1505 (1990).CrossRefGoogle Scholar
7.Watanabe, T. and Funakubo, H., Jpn. J. Appl. Phys. 39. 5211 (2000).CrossRefGoogle Scholar
8.Watanabe, T., Saiki, A., Saito, K., and Funakubo, H. (unpublished).Google Scholar
9.Okuda, N., Saito, K., and Funakubo, H., Jpn. J. Appl. Phys. 39, 572 (2000).CrossRefGoogle Scholar
10.Higashi, N., Okuda, N., and Funakubo, H., Jpn. J. Appl. Phys. 39, 2780 (2000).CrossRefGoogle Scholar
11.Okuda, N., Matsuzaki, T., Shinozaki, K., Mizutani, N., and Funakubo, H., Trans. Mater. Res. Soc. Jpn. 24, 51 (1999).Google Scholar
12.Sakashita, Y., Segawa, H., Tominaga, K., and Okada, M., J. Appl. Phys. 73, 1 (1993).Google Scholar
13.Saito, K., Ishikawa, K., Yamaji, I., Akai, T., and Funakubo, H., Integ. Ferro. (in press).Google Scholar
14.Suzuki, T., Nishi, Y., Fujimoto, M., Ishikawa, K., and Funakubo, H., Jpn. J. Appl. Phys. 38, 1265 (1999).Google Scholar
15.Du, X. and Chen, I., J. Am. Ceram. Soc. 81, 3253 (1998).CrossRefGoogle Scholar