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Erbium doping into lithium niobate and sapphire single crystal wafers

Published online by Cambridge University Press:  31 January 2011

P. Nekvindova ,
J. Spirkova-Hradilova ,
J. Schröfel  and
V. Perina
P. Nekvindova
Affiliation:
Department of Inorganic Chemistry, Institute of Chemical Technology of Prague, Technická5, 166 28 Prague, Czech Republic
J. Spirkova-Hradilova
Affiliation:
Department of Inorganic Chemistry, Institute of Chemical Technology of Prague, Technická5, 166 28 Prague, Czech Republic
J. Schröfel
Affiliation:
Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University, Technicka 3, 166 27 Prague, Czech Republic
V. Perina
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, Czech Academy of Sciences, 250 68 Rez, Czech Republic
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Abstract

The possibility of localized doping by Er3+ diffusion at moderate (less than 500 °C) temperature was for the first time demonstrated for sapphire single crystal wafers. The doping was achieved by immersing the substrate wafers into reaction melt containing small amounts of erbium salt. The crucial point of the presented technology was a crystallographic orientation of the used wafers. The most suitable orientation of the cuts was the “X-cut” with orientation (11–20). The strong anisotropy of the moderate temperature Er3+ doping into lithium niobate and sapphire was explained on the basis of the crystal structure of particular cuts.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 2 , February 2001 , pp. 333 - 335
Copyright
Copyright © Materials Research Society 2001

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