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The effect of electrode composition on rf magnetron sputtering deposition of Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 films

Published online by Cambridge University Press:  03 March 2011

M.C. Jiang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
T.B. Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Ferroelectric Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (abbreviated PMNT) thin films were prepared on silicon substrates by rf magnetron sputtering deposition with PbO-enriched PMNT targets. The effects of electrode composition and thin film growth conditions were investigated with grazing-incidence x-ray diffraction, secondary ion mass spectrometry, and scanning electron microscopy. The dielectric property of perovskite films was also measured. The usage of a Pt/Ti electrode was observed to enhance the formation of perovskite PMNT films; in addition, the TiO2 rutile phase was formed at the interface between the PMNT film and Pt electrode due to the oxidation of out-diffused Ti atoms from the inner Ti electrode. It was then noticed that if a target containing a larger excess of PbO was used, a higher consumption of TiO2 occurred and more perovskite phase would be formed in the deposited films. Consequently, perovskite PMNT films having a uniform microstructure and satisfactory dielectric property close to the bulk value were obtained by rf magnetron sputtering deposition on the Pt/Ti/SiO2/Si substrate at 640 °C under appropriate working conditions.

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Articles
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Olowolafe, J. O., Jones, R. E. Jr., Campbell, A. C., Hegde, R. I., and Mogab, C. J., J. Appl. Phys. 73, 1764 (1993).CrossRefGoogle Scholar
2Francis, L. F. and Payne, D. A., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 173.Google Scholar
3Francis, L. F. and Payne, D. A., J. Am. Ceram. Soc. 74, 3000 (1991).CrossRefGoogle Scholar
4Wood, V. E., Busch, J. R., Ramamurthi, S. D., and Swartz, S. L., J. Appl. Phys. 71, 4557 (1992).CrossRefGoogle Scholar
5Okuwada, K., Imai, M., and Kukuno, K., Jpn. J. Appl. Phys. 28, L1271 (1989).CrossRefGoogle Scholar
6Francis, L. F., Oh, Y. J., and Payne, D. A., J. Mater. Sci. 25, 5007 (1990).CrossRefGoogle Scholar
7Okuwada, K., Nakamura, S., Imai, M., and Kakuno, K., Jpn. J. Appl. Phys. 29, 1153 (1990).CrossRefGoogle Scholar
8Udayakumar, K. R., Chen, J., Schuele, P. J., Cross, L. E., Kumar, V., and Krupanidhi, S. B., Appl. Phys. Lett. 60, 1187 (1992).CrossRefGoogle Scholar
9Hase, T. and Shiosaki, T., Jpn. J. Appl. Phys. 30, 2159 (1991).CrossRefGoogle Scholar
10Abe, K., Tomita, H., Toyoda, H., Imai, M., and Yokote, Y., Jpn. J. Appl. Phys. 30, 2152 (1991).CrossRefGoogle Scholar
11Olowolafe, J. O., Jones, R. E. Jr., Campbell, A. C., Maniar, P. D., Hegde, R. I., and Mogab, C. J., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 355.Google Scholar
12Pretorius, R., Harrisand, J. M., and Nicolet, M. A., Solid State Electron. 21, 667 (1978).CrossRefGoogle Scholar
13Ting, C. Y., Wittmer, M., Lyer, S. S., and Brodsky, S. B., J. Electrochem. Soc: Solid State Science and Technology 131, 2934 (1984).CrossRefGoogle Scholar
14Taubenblatt, M. A. and Helms, C. R., J. Appl. Phys. 53, 6308 (1982).CrossRefGoogle Scholar
15Guha, J. P. and Anderson, H. U., J. Am. Ceram. Soc. 70, C-39 (1987).CrossRefGoogle Scholar
16Huang, T. C., Adv. X-Ray Annl. 33, 91 (1990).Google Scholar
17Takayama, T. and Matsumoto, Y., Adv. X-Ray Annl. 33, 109 (1990).Google Scholar
18Tisone, T. C. and Drobek, J., J. Vac. Sci. Technol. 9, 271 (1971).CrossRefGoogle Scholar
19Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U., and Hoesler, W., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 123.Google Scholar
20Kugimiya, K., Ueda, I., and Iizima, K., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 179.Google Scholar