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Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

Published online by Cambridge University Press:  31 January 2011

S. J. Lloyd ,
J. M. Molina-Aldareguia  and
W. J. Clegg
S. J. Lloyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
J. M. Molina-Aldareguia
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
W. J. Clegg
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
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Abstract

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3347 - 3350
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Martinez, E., Andújar, J.L., Polo, M.C., Esteve, J., Robertson, J., and Milne, W.I., Diamond Relat. Mater. 10, 145 (2001).CrossRefGoogle Scholar
2.Saka, H., J.Vac. Sci. Technol. B 16, 2522 (1998).CrossRefGoogle Scholar
3.Lloyd, S.J., Pitchford, J.E., Molina-Aldareguia, J.M., Barber, Z.H., Blamire, M.G., and Clegg, W.J., Microscopy and Microanalysis 5, Suppl. 2, 776 (1999).CrossRefGoogle Scholar
4.Kailer, A., Gogotosi, Y.G., and Nickel, K.G., J. Appl. Phys. 81, 3057 (1997).Google Scholar
5.Piltz, R.O., Maclean, J.R., Clark, S.J., Ackland, G.J., Hatton, P.D., and Crain, J., Phys. Rev. B 52, 4072 (1995).CrossRefGoogle Scholar
6.Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).CrossRefGoogle Scholar
7.Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P., Appl. Phys. Lett. 77, 3749 (2000).CrossRefGoogle Scholar
8.High-Pressure Properties of Matter, Landolt Börnstein, New Series, Group IV, Vol. 4, edited by Beggerow, G. (Springer-Verlag, Berlin, Germany, 1980).Google Scholar
9.Clarke, D.R., Kroll, M.C., Kirchner, P.D., Cook, R.F., and Hockey, B.J., Phys. Rev. Lett. 60, 2156 (1988).Google Scholar
10.Zarudi, I. and Zhang, L.C., Tribology International 32, 701 (1999).Google Scholar
11.Mann, A.B., van Heerden, D., Pethica, J.B., and Weihs, T.P., J. Mater. Res. 15, 1754 (2000).CrossRefGoogle Scholar
12.Pharr, G.M., Oliver, W.C., and Harding, D.S., J. Mater. Res. 6, 1129 (1991).Google Scholar
13.Morris, J.C. and Callahan, D.L., J. Mater. Res. 9, 2907 (1994).CrossRefGoogle Scholar
14.Alexander, H. and Haasen, P., Solid State Physics 22, 27 (1968).Google Scholar
15.Omri, M.B., Tete, C., Michel, J-P., and George, A., Philos. Mag. A 55, 601 (1987).CrossRefGoogle Scholar
16.Gerk, A.P. and Tabor, D., Nature (London) 271, 732 (1978).CrossRefGoogle Scholar
17.Semiconductors. Physics of Group IV Elements and III-V Compounds, Landolt-Börnstein, New Series, Group III, Vol. 17a, edited by Madelung, O., Schulz, M., and Weiss, H. (Springer-Verlag, Berlin, Germany, 1982).Google Scholar
18.Edagawa, K., Koizumi, H., Kamimura, Y., and Suzuki, T., Philos. Mag. A 80, 2591 (2000).Google Scholar
19.Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P., Appl. Phys. Lett. 78, 3235 (2001).Google Scholar
20.Semiconductors, Landolt-Börnstein, New Series, Group III, Vol. 22a, edited by Madelung, O. and Schulz, M. (Springer-Verlag, Berlin, Germany, 1987.Google Scholar
21.Jayaweera, N.B., Bushby, A.B., Kidd, P., Kelly, A., and Dunstan, D.J., Philos. Mag. Lett. 79, 343 (1999).Google Scholar