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Cross-sectional observation on the indentation of [001] silicon

Published online by Cambridge University Press:  31 January 2011

Y. Q. Wu ,
G. Y. Shi  and
Y. B. Xu
Y. Q. Wu
Affiliation:
State Key Laboratory for Fatigue and Fracture of Materials, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 110015, People's Republic of China and Laboratory of Atomic Imaging of Solids, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 110015, People's Republic of China
G. Y. Shi
Affiliation:
Department of Electronic Science and Engineering, University of Liaoning, Shenyang, 110036, People's Republic of China
Y. B. Xu
Affiliation:
State Key Laboratory for Fatigue and Fracture of Materials, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 110015, People's Republic of China and Laboratory of Atomic Imaging of Solids, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 110015, People's Republic of China
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Abstract

A transmission electron microscope (TEM) micrograph of cross-sectionally viewed Vickers indentation made on the surface of (001) silicon at ambient temperature was obtained. The picture clearly reveals a triangle area, pointing downward and having nondiffraction-contrast, left after unloading, which further confirms the amorphized range induced by indentation in silicon. Analysis of the picture directly manifests a significant recovery of indentation depth. Surface shape and range of the amorphous silicon region do not coincide with that of the indenter and the corresponding distribution pattern of hydrostatic stress beneath indentation predicted by elastoplastic theory, respectively. It seems that the amorphization could not be attributed to the result of hydrostatic stress alone.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2399 - 2401
Copyright
Copyright © Materials Research Society 1999

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