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Coherent island formation of Cu2O films grown by chemical vapor deposition on MgO(110)

Published online by Cambridge University Press:  31 January 2011

P. R. Markworth ,
X. Liu ,
J. Y. Dai ,
W. Fan ,
T. J. Marks  and
R. P. H. Chang
P. R. Markworth
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
X. Liu
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
J. Y. Dai
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
W. Fan
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
T. J. Marks
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
R. P. H. Chang*
Affiliation:
Materials Research Center, Northwestern University, Evanston, Illinois 60208
*
a)Address all correspondence to this author.
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Abstract

Cuprous oxide (Cu2O) films have been grown on single-crystal MgO(110) substrates by a chemical vapor deposition process in the temperature range 690–790 °C. X-ray diffraction measurements show that phase-pure, highly oriented Cu2O films form at these temperatures. The Cu2O films are observed to grow by an island-formation mechanism on this substrate. Films grown at 690 °C uniformly coat the substrate except for micropores between grains. However, at a growth temperature of 790 °C, an isolated, three-dimensional island morphology develops. Using a transmission electron microscopy and atomic force microscope, both dome- and hut-shaped islands are observed and are shown to be coherent and epitaxial. The isolated, coherent islands form under high mobility growth conditions where geometric strain relaxation occurs before misfit dislocation can be introduced. This rare observation for oxides is attributed to the relatively weak bonding of Cu2O, which also has a relatively low melting temperature.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2408 - 2414
Copyright
Copyright © Materials Research Society 2001

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