Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Li, Z. C.
Liu, L.
Wu, X.
He, L. L.
and
Xu, Y. B.
2003.
Structure at the crack tip in GaAs.
Philosophical Magazine Letters,
Vol. 83,
Issue. 4,
p.
217.
Wasmer, K.
Ballif, C.
Gassilloud, R.
Pouvreau, C.
Rabe, R.
Michler, J.
Breguet, J.‐M.
Solletti, J.‐M.
Karimi, A.
and
Schulz, D.
2005.
Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale.
Advanced Engineering Materials,
Vol. 7,
Issue. 5,
p.
309.
Taylor, Curtis R.
Stach, Eric A.
Salamo, Gregory
and
Malshe, Ajay P.
2005.
Nanoscale dislocation patterning by ultralow load indentation.
Applied Physics Letters,
Vol. 87,
Issue. 7,
Taylor, Curtis R
Malshe, Ajay P
Salamo, Gregory
Prince, Robin N
Riester, Laura
and
Cho, Seong Oh
2005.
Characterization of ultra-low-load (µN) nanoindents in GaAs(100) using a cube corner tip.
Smart Materials and Structures,
Vol. 14,
Issue. 5,
p.
963.
Xu, Y. B.
Li, Z. C.
and
Zhang, H.
2008.
Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal.
Philosophical Magazine Letters,
Vol. 88,
Issue. 1,
p.
19.
XU, Yong-Bo
2009.
Indentation-induced Plasticity, Damage and Fracture in Si and GaAs Single Crystals.
Journal of Inorganic Materials,
Vol. 24,
Issue. 6,
p.
1081.
Wu, Y.Q.
Huang, H.
and
Zou, J.
2012.
Lattice bending in monocrystalline GaAs induced by nanoscratching.
Materials Letters,
Vol. 80,
Issue. ,
p.
187.
Wu, Yueqin
Mu, Dekui
and
Huang, Han
2020.
Deformation and removal of semiconductor and laser single crystals at extremely small scales.
International Journal of Extreme Manufacturing,
Vol. 2,
Issue. 1,
p.
012006.
Gao, Rui
Jiang, Chen
Dong, KangJia
Lang, XiaoHu
Jiang, JinXin
and
Huang, PengHui
2021.
Anisotropy mechanical behavior of crystals based on gallium arsenide cleavage processing.
Ceramics International,
Vol. 47,
Issue. 15,
p.
22138.
Zhao, Bo
Gao, Xifeng
Pan, Jiansheng
Liu, Huan
and
Zhao, Pengyue
2024.
Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation.
Micromachines,
Vol. 15,
Issue. 1,
p.
110.