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Nanotopography impact in shallow-trench isolation chemical mechanical polishing—analysis method and consumable dependence

Published online by Cambridge University Press:  03 March 2011

Jea-Gun Park ,
Takeo Katoh  and
Ungyu Paik
Jea-Gun Park
Affiliation:
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
Takeo Katoh*
Affiliation:
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
Ungyu Paik
Affiliation:
Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The nanotopography of the surface of silicon wafers has become an important issue in ULSI device manufacturing, as it affects the post–chemical mechanical polishing (post-CMP) uniformity of the thickness deviation of dielectric films. A spectral method is proposed to examine quantitatively how the nanotopography impacts the film thickness deviation during CMP. The nanotopography impact was investigated in terms of its dependence on the characteristics of consumables, such as the polishing pad hardness and the wafer manufacturing method. In addition, the effects of the surfactant and the abrasive size in ceria slurry on nanotopography impact were investigated. It was found that the magnitude of the post-CMP oxide thickness deviation due to nanotopography increased with the surfactant concentration in the case of smaller abrasives but was almost independent of the concentration in the case of larger abrasives. These results demonstrate that the nanotopography impact can be controlled by manipulating the slurry characteristics.

Keywords

SemiconductorFilmPolymer
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1783 - 1790
Copyright
Copyright © Materials Research Society 2004

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References

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