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Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

C. H. Lin ,
R. J. Hwu  and
L. P. Sadwick
C. H. Lin
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
R. J. Hwu
Affiliation:
Department of Materials Science and Engineering, and Department of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112
L. P. Sadwick
Affiliation:
Department of Materials Science and Engineering, and Department of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112
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Abstract

Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs layer are stacking faults or microtwins, and they directly correlated with the islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion mass spectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3266 - 3273
Copyright
Copyright © Materials Research Society 2001

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