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Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

Published online by Cambridge University Press:  31 January 2011

Uong Chon ,
Hyun M. Jang ,
Sun-Hwa Lee  and
Gyu-Chul Yi
Uong Chon*
Affiliation:
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
Hyun M. Jang
Affiliation:
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
Sun-Hwa Lee
Affiliation:
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
Gyu-Chul Yi
Affiliation:
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
*
a) Address all correspondence to this author. e-mail: [email protected] Also affiliated with Research Institute of Industrial Science and Technology (RIST), P.O. Box 135, Pohang 790-330, Republic of Korea
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Abstract

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3124 - 3132
Copyright
Copyright © Materials Research Society 2001

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