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Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

Published online by Cambridge University Press:  03 March 2011

Takeshi Morita ,
Yasuo Wagatsuma ,
Hitoshi Morioka ,
Hiroshi Funakubo ,
Nava Setter  and
Yasuo Cho
Takeshi Morita*
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Miyagi 980-8577, Japan
Yasuo Wagatsuma
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Miyagi 980-8577, Japan
Hitoshi Morioka
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Nava Setter
Affiliation:
Ceramics Laboratory, Faculty of Engineering, Material Institute, Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Miyagi 980-8577, Japan
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure,and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition has been reported, the ferroelectric measurement has not been conducted due to the peel-off morphology of the film. The current paper investigates the improvement of an epitaxial PZT thin film deposited via a hydrothermal method. By adjusting the position at which the substrate was suspended in the solution, smooth morphology surface was successfully obtained. As a bottom electrode, a 200-nm SrRuO3 thin film was deposited on SrTiO3 single crystals, and the PZT thin film was deposited on SrRuO3. The remanent polarization 2Pr and coercive electric field for PZT on SrRuO3/SrTiO3 (001) were 17.1 μC/cm2 and 36 kV/cm, respectively, and those of PZT on SrRuO3/SrTiO3 (111) were 32.7 μC/cm2 and 59 kV/cm, respectively. The reason for large imprint electrical field, 91 kV/cm and 40 kV/cm for each film, was unclear at this stage, although it is associated with self–alignment poling direction. This self–alignment poling direction was confirmed via scanning nonlinear dielectric microscopy and is thought to have been related to the deposition mechanisms.

Keywords

HydrothermalEpitaxyThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1862 - 1868
Copyright
Copyright © Materials Research Society 2004

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References

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