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Etching to obtain atomically flat 6H–SiC (000-1) surface after annealing in nitrogen ambient

Published online by Cambridge University Press:  03 March 2011

Masashi Harada ,
Takayuki Nagano  and
Noriyoshi Shibata
Masashi Harada
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Takayuki Nagano
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Noriyoshi Shibata
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
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Abstract

The etching process of the 6H–SiC(000-1) surface was investigated to obtain a flat surface by removing scratches due to polishing. An atomically flat surface with a step-terrace structure without scratches has been obtained by removing the graphite layer grown on the substrate after annealing in N2 at a temperature of 1900 °C for 6 h. The step height corresponds to that of a 6H–SiC unit cell. In contrast, a rough surface was observed on the Si face, 6H–SiC (0001), using the same process as for the C face.

Keywords

X-ray photoelectron spectroscopy (XPS)Reflection high-energy electron diffraction (RHEED)Surface chemistry
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1730 - 1735
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Sasaki, T. and Matsuoka, T: J. Appl. Phys. 64 4531 (1988).CrossRefGoogle Scholar
2Wang, D., Hiroyama, Y., Ichikawa, M. and Yoshida, S.: Appl. Phys. Lett. 77 1846 (2000).CrossRefGoogle Scholar
3Okumura, H., Hamaguchi, H., Koizumi, T., Balakrishnan, K., Ishida, Y., Arita, M., Chichibu, S., Nakanishi, H., Nagatomo, T. and Yoshida, S.: J. Cryst. Growth 189 (190), 390 (1998).Google Scholar
4Gamez-Cuatzin, H., Tardy, J., Rojo-Romeo, P., Philippe, A., Bru-Chevallier, C., Souifi, A., Guillot, G., Martinez-Guerrero, E., Feuillet, G., Daudin, B., Aboughe-Nze, P. and Monteil, Y.: Phys. Status Sol. 176 131 (1999).3.0.CO;2-D>CrossRefGoogle Scholar
5Gerthsen, D., Neubauer, B., Dieker, Ch., Lantier, R., Rizzi, A. and Luth, H.: J. Cryst. Growth 200 353 (1999).CrossRefGoogle Scholar
6Tungasmita, S., Birch, J., Hultman, L., Janzen, E. and Sundgren, J-E.: Mater. Sci. Forum 264–268, 1225 (1998).CrossRefGoogle Scholar
7Edgar, J.H., Yu, Z.J., David, J.Smith, Chaudhuri, J. and Cheng, X.: J. Electron. Mater. 26 1389 (1997).CrossRefGoogle Scholar
8Rowland, L.B., Kern, R.S., Tanaka, S. and Davis, R.F.: J. Mater. Res. 8 2310 (1993).CrossRefGoogle Scholar
9Vermaut, P., Ruterana, P. and Nouet, G.: Philos. Mag. A 76 1215 (1997).CrossRefGoogle Scholar
10King, S.W., Davis, R.F., Ronning, C., Benjamin, M.C. and Nemanich, R.J.: J. Appl. Phys. 86 4483 (1999).CrossRefGoogle Scholar
11Shi, Y., Xie, Z.Y., Liu, L.H., Liu, B., Edgar, J.H. and Kuball, M.: J. Cryst. Growth 233 177 (2001).CrossRefGoogle Scholar
12Yano, H., Hirano, T., Kimoto, T. and Matsunami, H.: Appl. Phys. Lett. 78 374 (2001).CrossRefGoogle Scholar
13Aigo, T., Katsuno, M., Fujimoto, T., Yashiro, H. and Ohtani, N.: Jpn. J. Appl. Phys. 41 2855 (2002).CrossRefGoogle Scholar
14Torres, V.M., Edwards, J.L., Wilkens, B.J., Smith, D.J., Dork, R.B. and Tsong, I.S.T.: Appl. Phys. Lett. 74 985 (1999).CrossRefGoogle Scholar
15Yamada, S., Kato, J., Tanaka, S., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. and Suzuki, A.: Appl. Phys. Lett. 78 3612 (2001).CrossRefGoogle Scholar
16Yano, H., Hirano, T., Kimoto, T. and Matsunami, H.: Jpn. J. Appl. Phys. 39 2008 (2000).CrossRefGoogle Scholar
17Owman, F., Hallin, C., Martensson, P. and Janzen, E.: J. Cryst. Growth 167 391 (1996).CrossRefGoogle Scholar
18Rowland, A.A. Burk Jr.and L.B.: J. Cryst. Growth 167 587 (1996).Google Scholar
19Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M. and Greve, D.W.: J. Electron. Mater. 27 308 (1998).CrossRefGoogle Scholar
20Nakamura, S., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. and Suzuki, A.: Appl. Phys. Lett. 76 3412 (2000).CrossRefGoogle Scholar
21Xie, Z.Y., Wei, C.H., Li, L.Y., Yu, Q.M. and Edgar, J.H.: J. Cryst. Growth 217 115 (2000).CrossRefGoogle Scholar
22Xie, Z.Y., Wei, C.H., Chen, S.F., Jiang, S.Y. and Edgar, J.H.: J. Electron. Mater. 29 411 (2000).CrossRefGoogle Scholar
23Wolan, J.T., Grayson, B.A., Kohlscheen, J., Emirov, Y., Schlaf, R., Swartz, W. and Saddow, S.E.: J. Electro. Mater. 31 380 (2002).CrossRefGoogle Scholar
24Starke, U., Bram, Ch., Steiner, P.R., Hammer, W., Heinz, K. and Muller, K.: Appl. Surf. Sci. 89 175 (1995).CrossRefGoogle Scholar
25Toyoda, N., Matsui, S. and Yamada, I.: Jpn. J. Appl. Phys. 41 4287 (2002).CrossRefGoogle Scholar
26Zhou, L., Audurier, V., Pirouz, P. and Powell, J.A.: J. Electrochem. Soc. 144 L–161 (1997).CrossRefGoogle Scholar
27Qian, W., Skowronski, M., Augstine, G., Glass, R.C., Hobgood, H.M. and Hopkins, R.H.: J. Electrochem. Soc. 142 4290 (1995).CrossRefGoogle Scholar
28Kikuchi, M., Takahashi, Y., Suga, T., Suzuki, S. and Bando, Y.: J. Am. Ceram. Soc. 75 189 (1992).CrossRefGoogle Scholar
29Anikin, M.M., Levedev, A.A., Pyatho, S.N., Strel’chuck, A.M. and Syrkin, A.L.: Mater. Sci. Eng. B11, 113 (1992).CrossRefGoogle Scholar
30Owman, F. and Martensson, P.: Surf. Sci. 330 L639 (1995).CrossRefGoogle Scholar
31Harada, M., Nagano, T. and Shibata, N.: Jpn. J. Appl. Phys. 41 L1218 (2002).CrossRefGoogle Scholar
32Guan, Z.P., Cai, A.L., Cabalu, J.S., Porter, H.L. and Huang, S.: Appl. Phys. Lett. 77 2491 (2000).CrossRefGoogle Scholar
33Fukuda, K., Cho, W.J., Arai, K., Suzuki, S., Senzaki, J. and Tanaka, T.: Appl. Phys. Lett. 77 866 (2000).CrossRefGoogle Scholar
34Kojima, K., Suzuki, T., Kuroda, S., Nishio, J. and Arai, K.: Jpn. J. Appl. Phys. 42 L637 (2003).CrossRefGoogle Scholar
35Kusunoki, M., Rokkaku, M. and Suzuki, T.: Appl. Phys. Lett. 71 2620 (1997).CrossRefGoogle Scholar
36Kusunoki, M., Suzuki, T., Hirayama, T., Shibata, N. and Kaneko, K.: Appl. Phys. Lett. 77 531 (2000).CrossRefGoogle Scholar
37 T. Nagano. private communication.Google Scholar
38Kamata, I., Tsuchida, H., Jikimoto, T. and Izumi, K.: Jpn. J. Appl. Phys. 39 6496 (2000).CrossRefGoogle Scholar
39Sander, D., Wulfhekel, W., Hanbucken, M., Nitsche, S., Palmari, J.P., Dulot, F., d’Avitaya, F.A. and Leycuras, A.: Appl. Phys. Lett. 81 3570 (2002).CrossRefGoogle Scholar
40Xie, X.N., Lim, R., Lim, J., Li, S.F.Y. and Loh, K.P.: Dia. & Rel. Mater. 10 1218 (2001).CrossRefGoogle Scholar
41Xie, X.N., Wang, H.Q., Wee, A.T.S. and Loh, K.P.: Surf. Sci. 478 57 (2001).CrossRefGoogle Scholar
42Johansson, L.I., Glans, P-A. and Hellgren, N.: Surf. Sci. 405 288 (1998).CrossRefGoogle Scholar
43Koh, A., Kestle, A., Wright, C., Wilks, S.P., Mawby, P.A. and Bowen, W.R.: Appl. Surf. Sci. 174 210 (2001).CrossRefGoogle Scholar
44van Bommel, A.J., Crombeen, J.E. and van Tooren, A.: Surf. Sci. 48 463 (1975).CrossRefGoogle Scholar
45Christiansen, K., Christiansen, S., Albrecht, M., Strunk, H.P. and Helbig, R.: Dia. & Rel. Mater. 6 1467 (1997).CrossRefGoogle Scholar
46Nagano, T., Ishikawa, Y. and Shibata, N.: Jpn. J. Appl. Phys. 42 1380 (2003).CrossRefGoogle Scholar
47Afanas’ev, V.V., Bassler, M., Pensl, G. and Schulz, M.: Phys. Stat. Solidi. 162 321 (1997).3.0.CO;2-F>CrossRefGoogle Scholar
48Afanas’ev, V.V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M.J. and Harris, C.I.: Appl. Phys. Lett. 68 2141 (1996).CrossRefGoogle Scholar