Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-26T08:12:30.224Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110)

Published online by Cambridge University Press:  31 January 2011

Paul R. Markworth ,
R. P. H. Chang ,
Y. Sun ,
G. K. Wong  and
J. B. Ketterson
Paul R. Markworth
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Y. Sun
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
G. K. Wong
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
J. B. Ketterson
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Get access

Abstract

Continuous epitaxial films of cuprous oxide (Cu2O) have been formed by the thermal oxidation of 1.5-μm-thick Cu metal films deposited on MgO(110) substrates. These films melted at 1118 °C in air, in agreement with equilibrium phase diagrams. Upon cooling from the liquid, a highly crystalline, epitaxial, 2.5-μm-thick Cu2O film was formed. X-ray diffraction spectroscopy revealed that the Cu2O film crystal structure was orthorhombically distorted from the bulk cubic crystal structure. High-resolution transmission electron microscopy showed that the film is coherent, and energy dispersive x-ray spectroscopy showed that interdiffusion is limited to the interface. These results suggest that a new epitaxially stabilized phase of Cu2O has been formed.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 914 - 921
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Lin, J.L. and Wolfe, J.P., Phys. Rev. Lett. 71, 1222 (1993).CrossRefGoogle Scholar
2.Evans, R.C., An Introduction to Crystal Chemistry (C.B.L.S., Marietta, OH, 1964).Google Scholar
3.O'Keefe, M., J. Chem. Phys. 38, 3035 (1963).Google Scholar
4.White, G.K., J. Phys. C 11, 2171 (1978).CrossRefGoogle Scholar
5.Manghnani, M.H., Brower, W.S., and Parker, H.S., Phys. Status Solidi A 25, 69 (1974).Google Scholar
6.Markworth, P.R., Sun, Y., Ketterson, J.B., and Chang, R.P.H., Unpublished.Google Scholar
7.Brower, W.S. and Parker, H.S., J. Cryst. Growth 8, 227 (1971).Google Scholar
8.Elliott, J.F., Metall. Trans. B 7B, 17 (1976).CrossRefGoogle Scholar
9.Schmidt-Whitley, R.D., Martinez-Clemente, M., and Revcolevschi, A., J. Cryst. Growth 23, 113 (1974).Google Scholar
10.Xue, J. and Dieckmann, R., J. Phys. Chem. Solids 51, 1263 (1990).CrossRefGoogle Scholar
11.Baumeister, P.W., Phys. Rev. 121, 359 (1961).Google Scholar
12.Ito, T., Yamaguchi, H., Okabe, K., and Masumi, T., J. Mater. Sci. 33, 3555 (1998).Google Scholar
13.Kaufman, R.G. and Hawkins, R.T., J. Lumin. 31, 32, 509 (1984).Google Scholar
14.Kaufman, R.G. and Hawkins, R.T., J. Electrochem. Soc. 131, 385 (1984).Google Scholar
15.Kaufman, R.G. and Hawkins, R.T., J. Electrochem. Soc. 133, 2652 (1986).Google Scholar
16.Paranthaman, M., David, K.A., and Lindemer, T.B., Mater. Res. Bull. 32, 165 (1997).Google Scholar
17.Sutton, A.P. and Balluffi, R.W., in Interfaces in Crystalline Materials, edited by Brook, R.J., Cheetham, A., Heuer, A. (Clarendon Press, Oxford, U.K., 1996).Google Scholar
18.Quillec, M., Launois, H., and Joncour, M.C., J. Vac. Sci. Technol. B 1, 238 (1983).Google Scholar
19.Ishihara, K.N., Maeda, M., and Shingu, P.H., Acta Metall. 33, 2113 (1985).CrossRefGoogle Scholar
20.Porat, O. and Riess, I., Solid State Ionics 74, 229 (1994).CrossRefGoogle Scholar
21.Ahmed, F., Sakai, K., Ota, H., Aoki, R., Ikemiya, N., and Hara, S., J. Low Temp. Phys. 105, 1343 (1996).CrossRefGoogle Scholar