Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-19T14:40:07.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of surface kinetics on the step coverage during chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Gyeong Soon Hwang ,
Sang Heup Moon ,
Suk Woo Nam  and
Chee Burm Shin
Gyeong Soon Hwang
Affiliation:
Department of Chemical Engineering, Seoul National University, Seoul 151-742, South Korea
Sang Heup Moon
Affiliation:
Department of Chemical Engineering, Seoul National University, Seoul 151-742, South Korea
Suk Woo Nam
Affiliation:
Battery and Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul 136–791, South Korea
Chee Burm Shin*
Affiliation:
Department of Chemical Engineering, Ajou University, Suwon 442–749, South Korea
*
b)Address all correspondence to this author. e-mial: [email protected]
Get access

Abstract

Profile evolution simulations during chemical vapor deposition based on a 2D continuum model reveal that the type of surface kinetics plays an important role in determining step coverage of films deposited in high aspect ratio trenches and vias. Linear surface kinetics, resulting from an adsorption rate limited process, is found to cause difficulty in bringing about conformal step coverage in deep narrow trenches without reducing the growth rate considerably. Under such condition, void-free filling cannot be achieved while maintaining a growth rate acceptable to integrated circuit (IC) manufacturing. The numerical study also suggests that the high tendency of the precursor for chemical equilibrium on a surface, resulting in nonlinear kinetics by a surface reaction limited process, is crucial to achieve a uniform step coverage as typically observed in SiO2 deposition from tetraethylorthosilicate (TEOS).

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2377 - 2380
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Matsuura, M., Hayashide, Y., Kotani, H., and Abe, H., Jpn. J. Appl. Phys. 30, 1530 (1991).CrossRefGoogle Scholar
2.Fujino, K., Nishimoto, Y., Tokumasu, N., and Maeda, K., J. Electrochem. Soc. 139, 2282 (1992).CrossRefGoogle Scholar
3.Oh, H.J., Rhee, S. W., and Kang, I. S., J. Electrochem. Soc. 139, 1714 (1992).Google Scholar
4.Li, J., McVittie, J. P., Ferziger, J., and Saraswat, K. C., J. Vac. Sci. Technol. B 13, 1867 (1995).Google Scholar
5.Becker, F.S., Pawlik, D., Anzinger, H., and Spitzer, A., J. Vac. Sci. Technol. B 5, 1555 (1987).Google Scholar
6.Sorita, T., Shiga, S., Ikuta, K., Egashira, Y., and Komiyama, H., J. Electrochem. Soc. 140, 2952 (1993).Google Scholar
7.Chang, C-P., Pai, C. S., and Hsieh, J.J., J. Appl. Phys. 67, 2119 (1990).CrossRefGoogle Scholar
8.Selamoglu, N., Mucha, J.A., Ibbotson, D.E., and Flamm, D. L., J. Vac. Sci. Technol. B 7, 1345 (1989).Google Scholar
9.Stout, P.J. and Kushner, M.J., J. Vac. Sci. Technol. A 11, 2562 (1993).CrossRefGoogle Scholar
10.Wickramanayaka, S., Nakanishi, Y., and Hatanaka, Y., Appl. Surf. Sci. 113, 670 (1997).Google Scholar
11.Sze, S.M., VLSI Technology, 2nd ed. (McGraw-Hill, New York, 1988), pp. 252–255.Google Scholar
12.Cheng, L-Y., McVittie, J.P., and Saraswat, K. C., Appl. Phys. Lett. 58, 2147 (1991).Google Scholar
13.Raupp, G.B., Shemansky, F. A., and Cale, T.S., J. Vac. Sci. Technol. B 10, 2422 (1992).CrossRefGoogle Scholar
14.Adams, A.C. and Capio, C. D., J. Electrochem. Soc. 126, 1042 (1979).CrossRefGoogle Scholar
15.Deshmukh, S. C. and Aydil, E. S., J. Vac. Sci. Technol. A 13, 2355 (1995).Google Scholar
16.Hwang, G. S. and Shin, C.B., J. Electrochem. Soc., in press.Google Scholar