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Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

Published online by Cambridge University Press:  26 November 2012

H. Högberg
Affiliation:
Uppsala University, Department of Inorganic Chemistry, The Ångström Laboratory, P.O. Box 538 SE-75121, Uppsala, Sweden
J. Birch
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
M. P. Johansson
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
L. Hultman
Affiliation:
Linköping University, Department of Physics, Thin Film Physics Division, SE-58183, Linköping, Sweden
U. Jansson
Affiliation:
Uppsala University, Department of Inorganic Chemistry, The Ångström Laboratory, P.O. Box 538 SE-75121, Uppsala, Sweden
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Abstract

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

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Articles
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Pierson, H.O., Handbook of Refractory Carbides and Nitrides: Properties, Characteristics, Processing and Applications (Noyes, Westwood, NJ, 1996).Google Scholar
2.Barnett, S.A. and Madan, A., Phys. World, 11, 45 (1998).CrossRefGoogle Scholar
3.Hultman, L., Engström, C., Birch, J., Johansson, M., Odén, M., Karlsson, L., and Ljungcrantz, H., Z. Metallkd. 90, 10 (1999).Google Scholar
4.Helmersson, U., Todorova, S., Barnett, S.A., Sundgren, J-E., Markert, L.C., Greene, J-E., J. Appl. Phys. 77, 4403 (1995).Google Scholar
5.Yee, K.K., Int. Met. Rev. 1, 19 (1978).Google Scholar
6.He, X-M., Li, W-Z., and Li, H-D., J. Mater. Res. 9, 2355 (1994).CrossRefGoogle Scholar
7.Arai, T., Fujita, H., and Oguri, K., Thin Solid Films 165, 139 (1988).CrossRefGoogle Scholar
8.Kaloyeros, A., Williams, W.S., and Constant, G., Rev. Sci. Instrum. 59, 1209 (1988).CrossRefGoogle Scholar
9.Zhao, Q., Parsons, J., Chen, H., Chadda, A., Wu, J., Kruaval, G., and Downham, D., Mater. Res. Bull. 30, 761 (1995).CrossRefGoogle Scholar
10.Norin, L., McGinnis, S., Jansson, U., Carlsson, J-O., J. Vac. Sci. Technol., A 15, 3082 (1997).CrossRefGoogle Scholar
11.Norin, L., Lu, J., Malm, J-O., and Jansson, U., J. Mater. Res. 14, 1589 (1999).CrossRefGoogle Scholar
12.Norin, L., Högberg, H., Lu, J., Malm, J-O., and Jansson, U., Appl. Phys. Lett. 73, 2754 (1998).CrossRefGoogle Scholar
13.Högberg, H., Malm, J-O., Talyzin, A., Norin, L., Lu, J., and Jansson, U. (unpublished).Google Scholar
14.Zetterling, C-M., Östling, M., Norin, L., and Jansson, U., in Widebandgap Semiconductors for High Power, High Frequency and High Temperature, edited by Denbaars, S., Shur, M.S., Palmour, J., and Spencer, M. (Mater. Res. Soc. Proc. 512, Warrendale, PA, 1998), pp. 125130.Google Scholar
15.Lee, S-K., Zetterling, C-M., , M.Östling, Palmquist, J-P., Högberg, H., and Jansson, U., Appl. Phys. Lett. 77, 1478 (2000).CrossRefGoogle Scholar
16.Birch, J., Sundgren, J-E., and Fewster, P.F., J. Appl. Phys. 78, 6562 (1995).CrossRefGoogle Scholar
17.Fewster, P.F., Crit. Rev. Solid State Mater. Sci. 22, 69 (1997).CrossRefGoogle Scholar
18.de Boer, D.K.G., Phys. Rev. B 44, 498 (1991).CrossRefGoogle Scholar
19.Johansson, L.I., Johansson, H.I.P., and Håkansson, K.L., Phys. Rev. B 48, 14520 (1993).CrossRefGoogle Scholar
20.Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., and Muilenberg, G.E., in Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Eden Prairie, MN, 1979).Google Scholar
21.van der Sluis, P., Mater. Sci. Forum 166–169, 141 (1994).CrossRefGoogle Scholar
22.Goldschmidt, H.J., Interstital Alloys (Butterworth, London, United Kingdom, 1967).CrossRefGoogle Scholar
23.Högberg, H., Birch, J., Johansson, M.P., Jansson, U., and Hultman, L., J. Cryst. Growth 219, 237 (2000).CrossRefGoogle Scholar
24.Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).Google Scholar
25.People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985).CrossRefGoogle Scholar
26.van der Merwe, J.H., J. Appl. Phys. 34, 123 (1963).CrossRefGoogle Scholar
27.Högberg, H., Malm, J-O., Talyzin, A., Norin, L., Lu, J., and Jansson, U., J. Mater. Res. (accepted).Google Scholar
28.Norin, L. and Jansson, U. (unpublished results).Google Scholar
29.Basir, Y.J. and Andersson, S.L., Int. J. Mass Spectrom. 185–187, 603 (1999).CrossRefGoogle Scholar
30.Wiklund, U., Nordin, M., Wänstrand, O., and Larsson, M., Surf. Coat. Technol. (in press).Google Scholar
31.Greene, J.E., in Handbook of Crystal Growth, Fundamental, edited by Hurle, D.T.J. (Elsevier, Amsterdam, The Netherlands, 1993), Vol. 1, p. 639.Google Scholar
32.Tast, F., Malinowski, N., Frank, S., Heinebrodt, M., Billas, I.M.L., and Martin, T.P., Z. Phys. D 40, 351 (1997).Google Scholar
33.Dance, I., J. Am. Chem. Soc. 118, 2699 (1996).CrossRefGoogle Scholar