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Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

Published online by Cambridge University Press:  31 January 2011

A. C. Y. Liu ,
J. C. McCallum  and
J. Wong-Leung
A. C. Y. Liu*
Affiliation:
Micro-Analytical Research Centre, School of Physics, University of Melbourne, Victoria, 3010, Australia
J. C. McCallum*
Affiliation:
Micro-Analytical Research Centre, School of Physics, University of Melbourne, Victoria, 3010, Australia
J. Wong-Leung*
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, ACT, 0200, Australia
*
a) Address all correspondence to this author. e-mail: [email protected]
b) e-mail: [email protected]
c) e-mail: [email protected]
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Abstract

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 11 , November 2001 , pp. 3229 - 3237
Copyright
Copyright © Materials Research Society 2001

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