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Chemical vapor deposition of boron nitride using premixed borontrichloride and ammonia

Published online by Cambridge University Press:  31 January 2011

Vladimir Pavlović ,
Horst-Rainer Kötter  and
Christoph Meixner
Vladimir Pavlović
Affiliation:
Forschungszentrum Jülich, Abt. ZAT-NPT, PF 1913, D-5170 Jülich, Germany
Horst-Rainer Kötter
Affiliation:
Forschungszentrum Jülich, Abt. ZAT-NPT, PF 1913, D-5170 Jülich, Germany
Christoph Meixner
Affiliation:
Forschungszentrum Jülich, Abt. ZAT-NPT, PF 1913, D-5170 Jülich, Germany
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Abstract

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 11 , November 1991 , pp. 2393 - 2396
Copyright
Copyright © Materials Research Society 1991

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