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Chemical stresses induced by grain-boundary diffusion in thin films

Published online by Cambridge University Press:  31 January 2011

W. L. Wang ,
Y. T. Chou  and
Sanboh Lee
W. L. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
Y. T. Chou
Affiliation:
Department of Chemical and Biochemical Engineering and Materials Science, University of California at Irvine, Irvine, California 92697
Sanboh Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
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Abstract

Chemical stresses induced by grain-boundary diffusion in thin films were analyzed. The stress distribution consisted of both tension and compression fields, and its characteristics were similar to those obtained for a semi-infinite solid. At a given time, the maximum stress (tension or compression) increased with increasing film thickness for both constant and instantaneous sources; it was generally higher than that in the semi-infinite system. The maximum stress (tension or compression) decreased as the diffusion time increased and at a given time and film thickness it increased with decreasing diffusivity ratio. The buildup of local stress is likely to cause damage and malfunctions of the film when used in an electronic device.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 7 , July 2001 , pp. 1967 - 1974
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Darken, L.S., Trans. AIME, 175, 184 (1948).Google Scholar
2.Smigelakas, A.D. and Kirkendall, E.O., Trans. AIME,171, 130 (1947).Google Scholar
3.Yang, L., Horne, G.T., and Pound, G.M., in Proc. Symp. on Physical Metallurgy of Stress Corrosion Cracking, Pittsburgh, (Interscience, New York, 1959), p. 29.Google Scholar
4.Li, J.C.M., Oriani, R.A., and Darken, L.S., Z. Physik. Chem. 49, 271 (1966).CrossRefGoogle Scholar
5.Larché, F. and Cahn, J.W., Acta Metall. 21, 1051 (1973).CrossRefGoogle Scholar
6.Larché, F. and Cahn, J.W., Acta Metall. 26, 53 (1978).CrossRefGoogle Scholar
7.Li, J.C.M., Metall. Trans. 9A, 1353 (1978).Google Scholar
8.Larché, F. and Cahn, J.W., Acta Metall. 30, 1835 (1982).CrossRefGoogle Scholar
9.Larché, F. and Cahn, J.W., Acta Metall. 33, 331 (1985).CrossRefGoogle Scholar
10.Stepheson, G.B., Acta Metall. 36, 2663 (1988).CrossRefGoogle Scholar
11.Miller, D.P., Moore, J.E., and Moore, C.R., J. Appl. Phys. 33, 2648 (1962).CrossRefGoogle Scholar
12.Schwuttke, G.H. and Queisser, H.J., J. Appl. Phys. 33, 1540 (1962).CrossRefGoogle Scholar
13.Jaccodine, R.J., Appl. Phys. Lett. 4, 114 (1964).CrossRefGoogle Scholar
14.Washburn, J., Thomas, G., and Queisser, H.J., J.Appl. Phys. 35, 1909 (1964).CrossRefGoogle Scholar
15.Levine, E., Washburn, J., and Thomas, G., J. Appl. Phys. 38, 81 (1967); 38, 87 (1967).CrossRefGoogle Scholar
16.Surhodreva, I.M. and Cheryukanova, L.D., Sov. Phys.-Solid State 10, 737 (1968).Google Scholar
17.Prussin, S., J. Appl. Phys. 32, 1876 (1961).CrossRefGoogle Scholar
18.Lee, S. and Li, J.C.M., J. Appl. Phys. 52, 1336 (1981).CrossRefGoogle Scholar
19.Lee, S. and Ouyang, H., J. Thermal Stresses 10, 269 (1987).CrossRefGoogle Scholar
20.Chu, J.L. and Lee, S., J. Appl. Phys. 73, 3211 (1993).CrossRefGoogle Scholar
21.Chu, J.L. and Lee, S., J. Appl. Phys. 74, 171 (1993).CrossRefGoogle Scholar
22.Wang, W.L., Chou, Y.T., and Lee, S., Metall. Mater. Trans. 29A, 2121 (1998).CrossRefGoogle Scholar
23.Gilmer, G.H. and Farrell, H.H., J. Appl. Phys. 47, 3792 (1976).CrossRefGoogle Scholar
24.Campbell, D.R. (unpublished research).Google Scholar
25.Gupta, D., Campbell, D.R., and Ho, P.S., in Thin Films Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978), p. 161.Google Scholar
26.Wang, W.L., Chou, Y.T., and Lee, S., Scripta Mater. 41, 1061 (1999).CrossRefGoogle Scholar