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Characterization of bond formation in SiC and Si3N4 implanted with Ti, Fe, and Co

Published online by Cambridge University Press:  31 January 2011

Didier Zanghi ,
Agnès Traverse ,
Sébastien Gautrot  and
Odile Kaïtasov
Didier Zanghi
Affiliation:
Laboratoire pour l'Utilisation du Rayonnement Electromagnétique (LURE), Centre Universitaire Paris-Sud, Bât. 209A, BP34, 91898 Orsay Cedex, France
Agnès Traverse*
Affiliation:
Laboratoire pour l'Utilisation du Rayonnement Electromagnétique (LURE), Centre Universitaire Paris-Sud, Bât. 209A, BP34, 91898 Orsay Cedex, France
Sébastien Gautrot
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, Bât. 108, 91405 Orsay Cedex, France
Odile Kaïtasov
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, Bât. 108, 91405 Orsay Cedex, France
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ti, Fe, and Co ions were implanted in two ceramics, SiC and Si3N4, to reach concentrations on the order of 10% over a depth of about 50–60 nm. X-ray absorption spectroscopy was performed at the K edge of the implanted ions to identify their local environment at the end of the implantation process. Ti was found to form Ti–C and Ti–N bonds whereas Co and Fe precipitated and formed clusters in Si3N4. CoSi was detected in SiC whereas, in the same matrix, Fe clusters coexist with FeSi. A coherent interpretation of these results is given in terms of the heat of reaction for all possible systems. We also successfully interpret in the same way some results found in literature in the case of implanted oxides.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 2 , February 2001 , pp. 512 - 523
Copyright
Copyright © Materials Research Society 2001

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