Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-26T18:09:27.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis and modeling of residual stress in diamond thin film deposited by the hot-filament chemical vapor deposition process

Published online by Cambridge University Press:  31 January 2011

Seung I. Cha  and
Soon H. Hong
Soon H. Hong
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon, 305-701, Korea
Get access

Abstract

The effect of microstructure on residual stress in diamond thin film was investigated. The diamond thin film was deposited by the hot filament chemical vapor deposition process with hydrogen/methane precursor gas and followed by annealing at 1150 °C for 1–30 min. The residual stresses of the diamond thin film were measured by Raman spectroscopy. A model to estimate the residual stress was proposed on the basis of grain boundary relaxation mechanism and microstructural analysis of diamond thin film. It is confirmed that the residual stress in diamond thin film is proportional to a microstructural factor, 1/ [D( f + 1)]1/2, where D is the grain size of diamond and f is the volume ratio of nondiamond carbon/diamond.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 7 , July 2001 , pp. 1953 - 1959
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Windischmann, H., Epps, G.F., Cong, Y., and Collins, R.W., J. Appl. Phys. 63, 2231 (1991).Google Scholar
2.Guo, H. and Alam, M., Thin Solid Film 212, 173 (1992).Google Scholar
3.Chalker, P.R., Jones, A.M., Johnston, C., and Buckley-Golder, I.M., Surf. Coat. Technol. 47, 365 (1991).Google Scholar
4.Chiou, Y.H., Hwang, C.T., Han, M.Y., Jou, J.H., Chang, Y.S., and Shih, H.C., Thin Solid Film 253, 119 (1994).Google Scholar
5.Kuo, C.T., Lin, C.R., and Lien, H.M., Thin Solid Film 290–291, 254 (1996).Google Scholar
6.Bablio, J.A., Farnsworth, B.C., Hankin, S., Hamill, G., and O’Neil, D., Thin Solid Film 212, 180 (1992).Google Scholar
7.Wang, W., Liao, K., Gao, J., and Liu, A., Thin Solid Film 215, 174 (1992).Google Scholar
8.Schwarzbach, D., Haubner, R., and Lux, B., Diamond Rel. Mater. 3, 757 (1994).Google Scholar
9.Choi, S.K. and Choi, H.M., J. Vac. Sci. Technol. A 14, 165 (1996).Google Scholar
10.Fabis, P.M., Thin Solid Film 288, 193 (1996).CrossRefGoogle Scholar
11.Grimsditch, M.H., Phys. Rev. B 32, 901 (1985).CrossRefGoogle Scholar
12.Bopart, H., Phys. Rev. B 32, 1423 (1985).Google Scholar
13.Kobashi, K., Nishimura, K., Miyata, K., Kumagai, K., and Nakaue, A., J. Mater. Res. 5, 2469 (1990).Google Scholar
14.Chiu, C.C., Liou, Y., and Juang, Y.D., Thin Solid Film 260, 118 (1995).CrossRefGoogle Scholar
15.Sharma, S.C., Green, M., Hyer, R.C., Dark, C.A., Black, T.D., Chourasia, A.R., Chopra, D.R., and Mishra, K.K., J. Mater. Res. 5, 2424 (1990).Google Scholar
16.Hoffman, R.W., Phys. Thin Film 3, 211 (1966).Google Scholar
17.Nix, W.D. and Clemens, B.M., J. Mater. Res. 14, 3467 (1999).Google Scholar