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Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures

Published online by Cambridge University Press:  31 January 2011

Robert J. Hohlfelder ,
Daniel A. Maidenberg ,
Reinhold H. Dauskardt ,
Yueguang Wei  and
W. Hutchinson
Robert J. Hohlfelder
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Daniel A. Maidenberg
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Reinhold H. Dauskardt*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-2205
Yueguang Wei
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
W. Hutchinson
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
*
b)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Adhesion and subcritical debonding at interfaces between a silica-filled epoxy underfill and a silicon die passivated by silicon nitride and benzocyclobutene (BCB) layers were investigated. Adhesion was measured in terms of a critical value of the applied strain energy release rate, G (J/m2 ). Subcritical debond-growth rates in the range of 10−9 to 10−3 m/s were characterized as a function of applied G. Adhesion and subcritical debonding were affected by changes in interfacial chemistry and environment. The surprisingly large effect of adjacent layer elastic properties on interfacial adhesion was demonstrated with simulations of interfacial fracture using a mechanics of materials approach. Interfacial chemistry was modified by using different adhesion promoters, by varying the BCB cure state, and by using different epoxy underfill resins. The effects of environmental variables were studied with temperature- and humidity-controlled environments in order to determine the separate roles of moisture activity and temperature.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 243 - 255
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Harper, C.A., Electronic Packaging and Interconnection Handbook, 2nd ed. (McGraw Hill, New York, 1996).Google Scholar
2.Kook, S-Y., Snodgrass, J.M., Kirtikar, A., and Dauskardt, R.H., 120, 328 (1998).Google Scholar
3.Wang, L.C., Mei, Z., and Dauskardt, R.H., in Materials Reliability in Microelectronics IX, edited by Volkert, C.A., Verbruggen, A.H., and Brown, D.D. (Mater. Res. Soc. Symp. Proc. 563, Warrendale, PA, 1999).Google Scholar
4.Wong, C.P., Clegg, D.B., Ananda Kumar, H., Kirchhoff, R.A., Carriere, C., Bruza, K., Rondan, N., and Sammler, R., Chapter 14: Package Sealing and Encapsulation, in Microelectronics Packaging Handbook Semiconductor Packaging: Part II, edited by Tummala, R.R., Rymaszewski, E.J., and Klopfenstein, A.G. (Chapman & Hall, New York, 1997), Vol. 2.Google Scholar
5.Dauskardt, R.H., Lane, M., Ma, Q. and Krishna, N., Eng. Fract. Mech. 61, 141 (1998).CrossRefGoogle Scholar
6.Liechti, K.M., Schapp, S.T. and Swadener, J.G., Int. J. Fract. 86, 361 (1997).CrossRefGoogle Scholar
7.Rice, J.R., J. Appl. Mech. 55, 98 (1988).CrossRefGoogle Scholar
8.Hutchinson, J.W. and Suo, Z., in Advances in Applied Mechanics, edited by Hutchinson, J.W. and Wu, T.Y. (Academic Press, Inc., New York, 1992), Vol. 29, pp. 63–191.Google Scholar
9.Ma, Q., Bumgarner, J., Fujimoto, H., Lane, M., and Dauskardt, R.H., in Materials Reliability in Microelectronics VII, edited by Clement, J.J., Keller, R.R., Krisch, K.S., Sanchez, J.E., and Suo, Z. (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), pp. 3–14.Google Scholar
10.Lane, M., Dauskardt, R.H., Ware, R., Ma, Q. and Fujimoto, H., in Materials Reliability in Microelectronics VII, edited by Clement, J.J., Keller, R.R., Krisch, K.S., Sanchez, J.E., and Suo, Z. (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), pp. 21–26.Google Scholar
11.Dai, X., Brillhart, M.V., and Ho, P.S., in Proc. 48th Electronic Components and Technology Conference, Seattle, WA (IEEE, New York, 1998).Google Scholar
12.Lane, M., Lane, M., Vainchtein, A., Gao, H., and Dauskardt, R.H., J. Mater. Res. (2000, in press).Google Scholar
13.Dai, C-A., Kramer, E.J., Washiyama, J., and Hui, C-Y., Macromolecules 29, 7536 (1996).CrossRefGoogle Scholar
14.Ohashi, K.L., Romero, A.C., McGrowan, P.W., Maloney, W.J., and Dauskardt, R.H., J. Orthop. Res. 16, 705 (1998).CrossRefGoogle Scholar
15.Snodgrass, J.M., Pantelidis, D., Bravman, J.C., and Dauskardt, R.H., in Low-Dielectric Constant Materials V, edited by Hummel, J., Endo, K., Loe, W.W., Mills, M., and Wang, S-Q. (Mater. Res. Soc. Symp. Proc., 565, Warrendale, PA, 2000), pp. 123–128.Google Scholar
16.Kook, S-Y., Kirtikar, A., and Dauskardt, R.H., in Materials Reliability in Microelectronics IX, edited by Volkert, C.A., Verbruggen, A.H., and Brown, D.D. (Mater. Res. Soc. Symp. Proc. 563, Warrendale, PA, 1999).Google Scholar
17.Swadener, J.G. and Liechti, K.M., J. Appl. Mech. 65, 25 (1988).CrossRefGoogle Scholar
18.Swadener, J.G., Liechti, K.M., and de Lozanne, A.L., J. Mech. Phys. Solids 47, 223 (1999).CrossRefGoogle Scholar
19.Wiederhorn, S.M., Fuller, E.R. Jr, and Thomson, R., Met. Sci. 14, 450 (1980).CrossRefGoogle Scholar
20.Bandyopadhyay, S. and Brown, H.R., Polymer 22, 245 (1981).CrossRefGoogle Scholar
21.Chan, M.K.V. and Williams, J.G., Polymer 24, 234 (1983).CrossRefGoogle Scholar
22.Chan, M.K.V. and Williams, J.G., Polymer 24 (Feb), 234 (1983).CrossRefGoogle Scholar
23.Tonyali, K. and Brown, H.R., J. Mater. Sci. 21, 3116 (1986).CrossRefGoogle Scholar
24.Lane, M., Krishna, N., Hashim, I., and Dauskardt, R.H., J. Mater. Res. 15, 203 (2000).CrossRefGoogle Scholar
25.Moyer, E., Ritter, E., Bernius, M., Townsend, P., Harris, R., Projanto, H., and Denton, D., Proc. IEPS 1, 37 (1992).Google Scholar
26.Stokich, T., Lee, W., and Peters, R. (Mater. Res. Soc. Symp. Proc. 227, Pittsburgh, PA, 1991), p. 103.Google Scholar
27.Kirchhoff, R.A., et al., J. Macromol. Sci. Chem. A 28 (11 & 12), 1079 (1991).CrossRefGoogle Scholar
28.Im, J. (personal communication, Dow Chemical Co., Midland, MI, 1999).Google Scholar
29.Turek, D.E., Polym. Eng. Sci. 33, 328 (1993).CrossRefGoogle Scholar
30.Kanninen, M.F., Int. J. Fract. 9, 83 (1973).CrossRefGoogle Scholar
31.Penado, F.E., J. Compos. Mater. 27, 383 (1993).CrossRefGoogle Scholar
32.Suo, Zhigang and John, Hutchinson, W., Int. J. Fract. 43, 1 (1990).CrossRefGoogle Scholar
33.Thouless, M.D., IBM J. Res. Dev. 38, 367 (1994).CrossRefGoogle Scholar
34.Briggs, D., Handbook of X-ray and Ultraviolet Photoelectron Spectroscopy (Heyden, London, United Kingdom, Philadelphia, PA, 1977), p. 398.Google Scholar
35.Hutchinson, J.W. and Evans, A.G., Acta Mater. 48, 125 (2000).CrossRefGoogle Scholar
36.Klein, P. and Gao, H., Eng. Fract. Mech. (2000, in press).Google Scholar
37.Tvergaard, V. and Hutchinson, J.W., J. Mech. Phys. Solids 41, 1119 (1993).CrossRefGoogle Scholar
38.Wei, Y. and Hutchinson, J.W., Int. J. Fract. 95, 1 (2000).CrossRefGoogle Scholar
39.Li, Z., Schmauder, S., and Dong, M., Comp. Mater. Sci. 15, 11 (1999).CrossRefGoogle Scholar
40.Qu, J. and Wong, C.P., Proc.—Electron. Compon. Technol. Conf. 848 (1998).Google Scholar
41.Maidenberg, D. and Dauskardt, R.H., Stanford University (2000, unpublished results).Google Scholar
42.Wiederhorn, S.M., Fuller, E.R., Thomson, R., Met. Sci. 14, 450 (1980).CrossRefGoogle Scholar
43.Gero, L., J. Chem. Phy. 16, 1011 (1948)CrossRefGoogle Scholar
44.Bueche, F., J. App. Phys. 26, 1133 (1955).CrossRefGoogle Scholar
45.Chan, M.K.V. and Williams, J.G., Polymer 24, 234 (1983).CrossRefGoogle Scholar
46.Lane, M., Ma, Qing, Fujimoto, H., Krishna, N., and Dauskardt, R.H., in Materials Reliability in Microelectronics IX, edited by Volkert, C.A., Verbruggen, A.H., and Brown, D.D. (Mater. Res. Soc. Symp. Proc. 563, Warrendale, PA, 1999).Google Scholar
47.Nguyen, N.C., Maloney, W.J. and Dauskardt, R.H., J. Mater. Sci.: Mater. Med. 8, 473 (1997).Google Scholar
48.Im, J., Shaffer, E.O., Peters, R., Rey, T., Murlick, C. and Sammler, R.L., Proc. ISHM ’96, Oct 6–10, Minneapolis, MN, (Microelectronics Society, Reston, VA, 1996), p. 168.Google Scholar