In this paper, a 10 W ultra-broadband GaN power amplifier (PA) is designed, fabricated, and tested. The suggested design technique provides a more accurate starting point for matching network synthesis and better prediction of achievable circuit performance. A negative-image model was used to fit the extracted optimum impedances based on source-/load-pull technique and multi-section impedance matching networks were designed. The implemented amplifier presents an excellent broadband performance, resulting in a gain of 8.5 ± 0.5 dB, saturated output power of ≥10 W, and power added efficiency (PAE) of ≥23% over the whole bandwidth. The linearity performance has also been characterized. An output third-order intercept point (OIP3) of ≥45 dBm was extracted based on a two-tone measurement technique in the operating bandwidth with different frequency spacing values. The memory effect based on AM/AM and AM/PM conversions was also characterized using a modulated WiMAX signal of 10 MHz bandwidth at 5.8 GHz. Furthermore, a broadband Wilkinson combiner was designed for the same bandwidth with very low loss to extend the overall output power. Excellent agreement between simulated and measured PA performances was also achieved.

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

This paper presents the design of an eight-element 60 GHz phased-array receiver chip with interference mitigation capability, fabricated in 0.25 μm SiGe BiCMOS technology. Each receiver element contains a low noise amplifier (LNA) and a vector-modulator that supports high-resolution amplitude and phase control. A fully differential power combining network follows the eight elements. The chip also includes an active power divider, a down conversion mixer, and fully integrated 48 GHz PLL to demonstrate the IF down-conversion. With LNA, a phase shifter and hybrid active and passive power combining network, each receiver path achieves 18 dB of gain, 360° phase shift in steps less than 3°, 20 dB amplitude control, and 4 GHz 3 dB-bandwidth and input referred 1 dB compression point P1 dB of each element is of −22 dBm. Each receiver element dissipates in total 132 mW. The phased-array receiver shows more than 25 dB of signal to interference noise ratio, by means of amplitude and phase control.

Radio frequency (RF) and microwave amplifier research has been largely focused on solid-state technology in recent years. This paper presents design and performance characterization of a 50-kW modular solid-state amplifier, operating at 505.8 MHz. It includes architecture selection and design procedures based on circuit and EM simulations for its building blocks like solid-state amplifier modules, combiners, dividers, and directional couplers. Key performance objectives such as efficiency, return loss, and amplitude/phase imbalance are discussed for this amplifier for real-time operation. This amplifier is serving as the state-of-the-art RF source in Indus-2 synchrotron radiation source. Characterization on component level as well as system level of this amplifier serves useful data for RF designers working in communication and particle accelerator fields.

The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

This paper presents a planar inverted-F antenna (PIFA) for ultra-wide band (UWB) communication, which is printed on a dielectric substrate of FR4-epoxy with 4.4 relative permittivity (ɛr), 2 mm thickness. This antenna is designed to be used in a 2.9–10.7 GHz frequency band, and a very wide bandwidth is realized by the addition of a parasitic element and a J-shaped slot to the PIFA. The effects of varying the parameters of the antenna on the performance have been investigated.

This paper focuses on the design of a telemetry antenna system intended for small satellites. It provides an axial ratio (AR) lower than 3 dB over ±60° conical space angle with over 20% of bandwidth. The antenna consists of a multilayer patch element fed by a wideband feeding circuit. The latter is an appropriate adjustment of 90° hybrid couplers and 180° ring coupler. We show that this design provides high-quality circular polarization properties for agile small satellites without having to suspend their mission to download their data and also without sacrificing the antenna low profile and wide bandwidth. The antenna is fabricated and the experimental performance is presented and followed by a discussion.

In this paper, the far-field pattern of a Cassegrain reflector is formulated. A novel illumination function is used to approximate the field distribution at the aperture of the reflector. The defined illumination function takes into account the central aperture blockage created by the subreflector. Using the illumination function, a closed-form expression describing the far-field radiation pattern of the Cassegrain reflector is formulated. The radiation pattern obtained from the derived equation is compared with the results obtained from physical optics and physical theory of diffraction. The results are found to be consistent with each other. It is found that the derived results show an impressive accuracy of 99.8% over the main-lobe region. The accuracy is found to be over 91 and 84% for the first and second significant side-lobe region, respectively, which can be considered satisfactory for many applications.

In this study, we present the implementation of invasive weed optimization (IWO) in the maximization of main-lobe to side-lobe level for the non-uniform planar antenna array. The antenna arrays investigated in this study are generated using the chaos game algorithm (CGA) and shaped into selected fractal geometries chosen on the basis of their interesting performance. This CGA is picked out in order to overcome the limitations found in the fractal arrays. All the attained results are compared with the results produced by a well-known optimization algorithm that is the particle swarm optimization (PSO). In all the optimized arrays, IWO shows superior optimization results compared with PSO.

Since Hodgkin and Huxley described the nerve axon as a cable (H–H model), many efforts have been made to find more approximated transmission line models representing the nerve axon. This paper describes a simple model that represents the nerve axon in two parts: the internodal space as a lossy thin-film microstrip line and the node of Ranvier as an active complex load. The complex load terminating the transmission line is given by the variable impedance of a tunnel diode. First, the internodal space is circuitally analyzed and electromagnetically simulated as a lossy thin-film microstrip line terminated on a complex fixed load. The transmission line circuit theory, the two-port network analysis, and a two-dimensional finite difference time domain method are used for such a task by forcing a strip subatomic metallization. Then, the transfer function of the internodal space, cascaded with the node of Ranvier, is equated to the transfer function of a transmission line section that includes a tunnel diode. This procedure is carried out in order to obtain the diode's variable impedance. The diode was introduced by Nagumo, Arimoto, and Yoshizawa for simulating the nerve axon as an active transmission line. The active transmission line is represented by the FitzHugh simplified H–H model known as the Bonhoeffer–van der Pol model.