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A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach

Published online by Cambridge University Press:  18 September 2017

Amir Ghobadi ,
Talha Masood Khan ,
Ozan Onur Celik ,
Necmi Biyikli ,
Ali Kemal Okyay  and
Kagan Topalli Open the ORCID record for Kagan Topalli [Opens in a new window]
Amir Ghobadi
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Talha Masood Khan
Affiliation:
Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
Ozan Onur Celik
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Necmi Biyikli
Affiliation:
Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey National Nanotechnology Research Center (UNAM), Bilkent University, 06800 Ankara, Turkey
Ali Kemal Okyay
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey National Nanotechnology Research Center (UNAM), Bilkent University, 06800 Ankara, Turkey
Kagan Topalli*
Affiliation:
Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey National Nanotechnology Research Center (UNAM), Bilkent University, 06800 Ankara, Turkey
*
Corresponding author: K. Topalli Email: [email protected]
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Abstract

In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.

Keywords

Schottky diodeTerahertzElectromagnetic modeling
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 10 , December 2017 , pp. 1905 - 1913
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

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