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MM-wave performance and avalanche noise estimation of hexagonal SiC and GaN IMPATTs for D-band applications

Published online by Cambridge University Press:  01 May 2012

Pravash R. Tripathy ,
Moumita Mukherjee  and
Shankar P. Pati
Pravash R. Tripathy*
Affiliation:
Purushottam Institute of Engineering & Technology, Rourkela, Odisha, India. Phone: +91 9437346463.
Moumita Mukherjee
Affiliation:
Centre for Millimeter-Wave Semiconductor devices and Systems (CMSDS), Institute of Radio Physics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India.
Shankar P. Pati
Affiliation:
National Institute of Science & Technology, Berhampur, Odisha, India.
*
Corresponding author: P. R. Tripathy Email: [email protected]
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Abstract

The mm-wave as well as avalanche noise properties of IMPATT diode at D-band are efficiently estimated, with different poly-types of silicon carbide (SiC) and GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage of 4H-SiC (180 V) is more than the same for 6H-SiC, ZB- and Wz-GaN-based diode of 170,158, and 160 V, respectively. Similarly, the efficiency (14.7%) is also high in the case of 4H-SiC as compared with 6H-SiC and GaN-based diode. The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power of about 8.38 W as compared with GaN IMPATT diode due to high breakdown voltage and negative resistance for the same frequency of operation. It is also observed that Wz-GaN exhibits better noise behavior 7.4 × 10−16 V2 s than SiC (5.16 × 10−15 V2 s) for IMPATT operation at 140 GHz. A comparison between the power output and noise from both the device reveals that Wz-GaN would be a suitable base material for high-power application of IMPATT diode with moderate noise.

Keywords

Avalanche noiseGallium nitrideIMPATTRF powerSilicon carbideMm-wave window frequency
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Issue 4 , August 2012 , pp. 473 - 481
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

[1]Trew, R.J.: High-frequency solid-state electronic devices. IEEE Trans. Electron Devices, 52 (5) (2005), 638–649.Google Scholar
[2]Buniatyan, V.V.; Aroutiounian, V.M.: Wide gap semiconductor microwave devices. J. Phys. D, Apply. Phys., 40 (20) (2007), 6355–6385.Google Scholar
[3]Shur, M.S.: GaN based transistors for high power applications. Solid State Electron., 42 (12) (1998), 2131–2138.CrossRefGoogle Scholar
[4]Mishra, U.K.; Wu, Y.; Kellar, B.P.; Kelar, S.; Baars Den, S.P.: GaN microwave electronics. IEEE Trans. Microw. Theory Tech., MTT-46 (1999), 756–761.Google Scholar
[5]Elasser, A.; Chow, T.P.: Silicon carbide benefits and advantages for power electronics circuits and systems. Proc. IEEE, 90 (6) (2002), 969–986.CrossRefGoogle Scholar
[6]Casady, J.B.; Johnso, R.W.: Status of silicon carbide semiconductor for high temperature applications: a review. Solid-State Electron., 39 (10) (1996), 1409–1422.CrossRefGoogle Scholar
[7]Neudeck, P.G.: Progress in silicon carbide semiconductor electronics technology. J. Electron. Matter, 24 (4) (1995), 283–288.Google Scholar
[8]Brandt, R.C. et al. : SiC for applications in high-power electronics, In Park, Y.S. (ed.), Semiconductors and Semimetals, vol. 52, Academic, New York, 1998, pp. 195–236.Google Scholar
[9]Pattanaik, S.R.; Dash, G.N.; Mishra, J.K.: Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz. Semicond. Sci. Technol., 20 (3) (2005), 299.CrossRefGoogle Scholar
[10]Oguzman, I.H. et al. : Theory of hole initiated impact ionization in bulk zinc blende and wurtzite GaN. J. Appl. Phys., 81 (2) (1997), 7827–7836.CrossRefGoogle Scholar
[11]Albrecht, J.D. et al. : Electronic transport characteristics of GaN for high temperature device modelling. J. Appl. Phys., 83 (1998), 4777–4781.CrossRefGoogle Scholar
[12]Oguzman, I.H. et al. : Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monteo Carlo calculation including a full zone band structure. J. Appl. Phys., 80 (1996), 4429–4436.Google Scholar
[13]Peatron, S.J.; Zolper, J.C.; Shul, R.J., Ren, F.: GaN: processing, defects, and devices. J. Appl. Phys., 86 (1999), 1–78.Google Scholar
[14]Peatron, S.J. et al. : Fabrication and performance of GaN electronic devices. Mater. Sci. Eng., 30 (2000), 55–212.Google Scholar
[15]Tripathy, P.R.; Panda, A.K.; Pati, S.P.: Comparison between the DC and microwave performance of wurtzite phase and zinc-blende phase GaN-based Impatts, in Proc. XV Int. Workshop on the Physics of Semiconductor Devices (IWPSD-2009), Excel India Publishers, New Delhi, 2009, 525–528, ISBN: 978-93-80043-55-5.Google Scholar
[16]Loh, W.S. et al. : Impact ionization coefficients in 4H-SiC. IEEE Trans. Electron Devices, 55 (8) (2008), 1984–1990.CrossRefGoogle Scholar
[17]Electronic Archive: New Semiconductor Materials, Characteristics and Properties [Online]. Available: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/SiC.Google Scholar
[18]Reklaitis, A.; Reggiani, L.: Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode. J. Appl. Phys., 95 (12) (2004), 7925–7935.CrossRefGoogle Scholar
[19]Electronic Archive: New Semiconductor Materials, Characteristics and Properties [Online]. Available: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN.Google Scholar
[20]Dash, S.K.; Pati, S.P.: Effect of optical radiation on millimeter-wave characteristics and avalanche noise generation in double-drift Impatt diodes based on opto-sensitive semiconductors. Microw. Opt. Technol. Lett., 33 (4) (2002), 295–300.CrossRefGoogle Scholar
[21]Mukherjee, M.; Tripathy, P.R.; Pati, S.P.: Effects of mobile space-charge on dynamic characteristics and parasitic resistance of InP terahertz IMPATT oscillator operating at elevated junction temperature. Arch. Appl. Sci. Res. (Int. J. USA), 2 (3) (2010), 42–52, ISSN 0975-508X.Google Scholar
[22]Eisele, H.; Haddad, G.I.: in Sze, S.M. (ed.), Microwave Semiconductor Device Physics, Wiley, New York, 1997, p. 343.Google Scholar
[23]Pati, S.P.; Tripathy, P.R.; Dash, S.K.: Avalanche breakdown characteristics of wide band gap vis-à-vis low band gap junctions and high RF power/low noise generation in ZnS DD IMPATTs. Int. J. Pure Appl. Phys., 6 (2) (2010), 229–241, ISSN 0973-1776.Google Scholar
[24]Panda, A.K.; Pavlidis, D.; Alekseev, E.: Noise characteristics of GaN-based IMPATTs. IEEE Trans. Electron Devices, 48 (2001), 1473–1475.CrossRefGoogle Scholar
[25]Reklaitis, A.; Reggiani, L.: Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes. J. Appl. Phys., 97 (2005), 043709.Google Scholar
[26]Scarborough, J.B.: Numerical Mathematical Analysis, The Johns Hopkins Press, Oxford IBH Publishing Co., 1969.Google Scholar
[27]Gummel, H.K.; Blue, J.L.: A small signal analysis of avalanche noise in IMPATT diodes. IEEE Trans. Electron Devices, 14 (1967), 569–580.CrossRefGoogle Scholar
[28]Mukherjee, M.; Mazumder, N.; Roy, S.K.: Photosensitivity analysis of gallium nitride and silicon carbide terahertz IMPATT oscillators: comparison of theoretical reliability and study on experimental feasibility. IEEE Trans. Device Mater. Reliab., 8 (2008), 608–620.CrossRefGoogle Scholar
[29]Usikov, A. et al. : Electrical and optical properties of thick, highly doped p-type GaN layers grown by HVPE. Phys. Stat. Sol. (c), 5 (2008), 1829.Google Scholar
[30]Lee, K.J.; Shin, E.H.; Kim, J.Y.; Oh, T.S.; Lim, K.Y.: Growth of high quality GaN epilayers with SixNy inserting layer on Si (111) substrate. J. Korean Phys. Soc., 45 (2004), S756–S759.Google Scholar
[31]Pastor, D.; Ibáñez, J.; Cuscó, R.; Artús, L.; González-Diaz, G.; Calleja, E.: Crystal damage assessment of Be + -implanted GaN by UV Raman scattering. Semicond. Sci. Technol., 22 (2) (2007), 70–73.CrossRefGoogle Scholar
[32]Konishi, R.; Yasokuchi, R.; Nakatsuka, O.; Koide, Y.; Moriyama, M.; Murakami, M.: Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC. Mater. Sci. Eng. B, 98 (3) (2003), 286–293.CrossRefGoogle Scholar
[33]Carter, C.H. Jr. et al. : Progress in SiC: from material growth to commercial device development. Mater. Sci. Eng., B61–2 (1999), 1–8.CrossRefGoogle Scholar
[34]Vassilevski, K.; Zekmtas, K.; Constantidis, G.; Stel'chuck, A.: Fabrication and electronics characterization of 4H-SiC p+nn+ diodes. Solid State Electron., 44 (2000), 1173–1177.CrossRefGoogle Scholar
[35]Yuan, L.; Cooper, J.A. Jr.; Melloch, M.R.; Webb, K.J.: Experimental determination of a SiC IMPATT oscillator. IEEE Electron Device Lett., 22 (6) (2001), 266.Google Scholar
[36]Mukherjee, M.; Mazumder, N.; Dasgupta, A.: Simulation experiment on optical modulation of 4H-SiC millimeter-wave high power IMPATT oscillator. J. Eur. Microw. Assoc. (EuMA Publishing – UK), 4 (2008), 276–282.Google Scholar