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Reliability issues of Gallium Nitride High Electron Mobility Transistors

Published online by Cambridge University Press:  23 March 2010

Gaudenzio Meneghesso ,
Matteo Meneghini ,
Augusto Tazzoli ,
Nicolo' Ronchi ,
Antonio Stocco ,
Alessandro Chini  and
Enrico Zanoni
Gaudenzio Meneghesso*
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Matteo Meneghini
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Augusto Tazzoli
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Nicolo' Ronchi
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Antonio Stocco
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Alessandro Chini
Affiliation:
Department of Information Engineering, University of Modena and Reggio Emilia, Via Vignolese 905, 41100 Modena, Italy.
Enrico Zanoni
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
*
Corresponding author: G. Meneghesso Email: [email protected]
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Abstract

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Keywords

GaN HEMT ReliabilityDamageElectroluminescenceHot electronsTrapping
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 39 - 50
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Mishra, U.K.; Shen, L.; Kazior, T.E.; Wu, Y.-F.: GaN-based rf power devices and amplifiers. Proc. IEEE, 96 (2008), 287–305.Google Scholar
[2]Quay, R.: Gallium Nitride Electronics, Springer, Berlin, 2008. ISBN: 978-3-540-71890-1.Google Scholar
[3]Nakajima, S. et al. : State of the art performance for high power & high efficiency GaN HEMTs: a Japanese perspective, in Meneghesso, G., ed., Proc. of European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE ‘07), 2007, 323–327. ISBN: 978-88-6129-088-4.Google Scholar
[4]www.eudyna.comGoogle Scholar
[5]www.cree.comGoogle Scholar
[6]www.nitronex.comGoogle Scholar
[7]www.rfmd.comGoogle Scholar
[8]Rosker, M.J.: The present state of the art of wide-bandgap semiconductors and their future, in Proc. of the IEEE Radio Frequency Integrated Circuit Symp., 2007, 159–162.CrossRefGoogle Scholar
[9]Gauthier, G.; Reptin, F.: KORRIGAN: development of GaN HEMT technology in Europe, in CS Mantech Conf., 2006, 49–51.Google Scholar
[10]Delage, S.L.; Dua, C.: Wide band gap semiconductor reliability: status and trends. Microelectron. Reliab., 43 (2003), 1705–1712.CrossRefGoogle Scholar
[11]Brown, J.D. et al. : Voltage dependent characteristics of 48 V AlGaN/GaN high electron mobility transistor technology on silicon carbide, in Proc. IEEE/MTT-S Int. Microwave Symp., 2007, 303–306.Google Scholar
[12]Joh, J.; del Alamo, J.A.: Critical voltage for electrical degradation of GaN high-electron mobility transistors. IEEE Electron Dev. Lett., 29 (4) (2008), 287–289.Google Scholar
[13]Joh, J.; del Alamo, J.A.: Mechanisms for electrical degradation of GaN high-electron mobility transistors, in Proc. of the IEEE Int. Electron Device Meeting (IEDM) Tech. Dig., 2006, 415–418.CrossRefGoogle Scholar
[14]Joh, J.; Xia, L.; del Alamo, J.A.: Gate current degradation mechanisms of GaN high electron mobility transistors, in Proc. of the IEEE Int. Electron Device Meeting (IEDM), 2007, 385–388.Google Scholar
[15]Meneghesso, G. et al. : Reliability of GaN high-electron-mobility transistors: state of the art and perspectives. IEEE Trans. Dev. Mater. Reliab., 8 (2) (2008), 332–343.CrossRefGoogle Scholar
[16]Zanoni, E. et al. : A review of failure modes and mechanisms of GaN-based HEMTs, in Proc. of the IEEE Int. Electron Device Meeting (IEDM), 2007, 381–384.Google Scholar
[17]Zanoni, E. et al. : Localized damage in AlGaN/GaN HEMTs induced by reverse bias testing. IEEE Electron Dev. Lett., 30 (5) (2009), 427–429.Google Scholar
[18]Trew, R.J.; Green, D.S.; Shealy, J.B.: AlGaN/GaN HFET reliability. IEEE Microw. Mag., 10 (4) (2009), 116–127.CrossRefGoogle Scholar
[19]Christou, A.: Reliability of gallium arsenide MMICs, Wiley and Sons, New York, 1992, ISBN 0 471 93490 9.Google Scholar
[20]Conway, A.M.; Chen, M.; Hashimoto, P.; Willadsen, P.J.; Micovic, M.: Failure mechanisms in GaN HFETs under accelerated RF stress, in Proc. of Compound Semiconductor MANufacturing TECHnology Conf. (MANTECH), 2007, 99–102.Google Scholar
[21]Chowdhury, U. et al. : TEM observations of crack- and pit-shaped defects in electrically degraded GaN HEMTs. IEEE Electron Dev. Lett,, 29 (10) (2008), 1098–1100.Google Scholar
[22]Park, S.Y. et al. : Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectron. Reliab., 49 (2009), 478–483.Google Scholar
[23]Inoue, Y. et al. : Degradation-mode analysis for highly reliable GaN-HEMT, in Proc. IEEE/MTT-S Int. Microwave Symp., 2007, 639–642.Google Scholar
[24]Kikkawa, T. et al. : High performance and high reliability AlGaN/GaN HEMTs. Phys. Status Solidi (a), 206 (6) (2009), 1135–1144.CrossRefGoogle Scholar
[25]Marcon, D. et al. : GaN-on-Si HEMT stress under high electric field condition. Phys. Status Solidi (c), 6 (S2) (2009), S1024–S1028.Google Scholar
[26]Selmi, L. et al. : Verification of electron distributions in silicon by means of hot carrier luminescence measurements. IEEE Trans. Electron Dev., 45 (4) (1998), 802–808.Google Scholar
[27]Zanoni, E. et al. : Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers. IEEE Electron Dev. Lett., 11 (11) (1990), 487–489.Google Scholar
[28]Meneghesso, G.; Grave, T.; Manfredi, M.; Pavesi, M.; Canali, C.; Zanoni, E.: Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence. IEEE Trans. Electron Dev., 47 (1) (2000), 2–10.Google Scholar
[29]Chen, H.; Lai, Z.; Kung, S.; Penner, R.; Li, G.P.: Electroluminescence characteristics of GaN HEMT at off-state. Phys. Status Solidi (c), 5 (6) (2008), 1895–1897.Google Scholar
[30]Chen, H. et al. : Observing electroluminescence from yellow luminescence-like defects in GaN high electron mobility transistors. Jpn. J. Appl. Phys., 47 (5) (2008), 3336–3339.Google Scholar
[31]Ivo, P. et al. : Influence of GaN cap on robustness of AlGaN/GaN HEMTs, in Proc. IEEE 47th Int. Reliability Physics Symp., 2009, 71–75.Google Scholar
[32]Shigekawa, N.; Shojima, K.; Suemitsu, T.: Optical study of high-biased AlGaN/GaN high electron mobility transistors. J. Appl. Phys., 92 (1) (2002), 531–535.Google Scholar
[33]Faqir, M.; Verzellesi, G.; Meneghesso, G.; Zanoni, E.; Fantini, F.: Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs. IEEE Trans. Electron Dev., 55 (7) (2008), 1592–1602.Google Scholar
[34]Chini, A.; Esposto, M.; Meneghesso, G.; Zanoni, E.: Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements. IEE Electron. Lett., 45 (8) (2009), 426–427.CrossRefGoogle Scholar
[35]Roff, C. et al. : Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering. IEEE Trans. Electron Dev., 56 (1) (2009), 13–19.Google Scholar
[36]Balaz, D.; Kalna, K.; Kuball, M.; Hayes, D.G.; Uren, M.J.; Asenov, A.: Impact of surface charge on the I–V characteristics of an AlGaN/GaN HEMT, in Proc. of European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE ‘09), Málaga (Spain), May 17–20, 2009.Google Scholar
[37]Johnson, J.W. et al. : Material, process, and device development of GaN-based HFETs on silicon substrates, in Electrochemical Society Proc., 2004–06, 2004, 405–419.Google Scholar
[38]Ladbrooke, P.H.; Blight, S.R.: Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate dependent anomalies. IEEE Trans. Electron Dev., 35 (3) (1988), 257–267.Google Scholar
[39]Menozzi, R.; Cova, P.; Canali, C.; Fantini, F.: Breakdown walkout in pseudomorphic HEMT's. IEEE Trans. Electron Dev., 43 (4) (1996), 543–546.Google Scholar
[40]Lusky, E., Shacham-Diamond, Y.; Shappir, A.; Bloom, I.; Eitan, B.: Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device. Appl. Phys. Lett., 85 (4) (2004), 669.Google Scholar
[41]Neuberger, M. et al. : Analysis of surface charging effects in passivated AlGaN/GaN FETs using a MOS test electrode. IEEE Electron Dev. Lett., 25 (5) (2004), 156–258.Google Scholar
[42]Dammann, M. et al. : Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab., 49 (2009), 474–477.CrossRefGoogle Scholar