Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Published online by Cambridge University Press: 23 March 2010
Abstract
The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.
- Type
- Original Article
- Information
- International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 105 - 114
- Copyright
- Copyright © Cambridge University Press and the European Microwave Association 2010
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