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New pulsed measurement setup for GaN and GaAs FETs characterization

Published online by Cambridge University Press:  19 April 2012

Alberto Santarelli ,
Rafael Cignani ,
Daniel Niessen ,
Pier Andrea Traverso  and
Fabio Filicori
Alberto Santarelli*
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Rafael Cignani
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Daniel Niessen
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Pier Andrea Traverso
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Fabio Filicori
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
*
Corresponding author: A. Santarelli Email: [email protected]
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Abstract

A new setup is proposed for the measurement of current–voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and GaN on SiC field effect transistors. The basic differences between the two technologies are highlighted in the paper.

Keywords

Simulation and characterizations of devices and circuitsModelingMicrowave measurements
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 387 - 397
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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