Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-27T14:38:34.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm

Published online by Cambridge University Press:  23 March 2010

J. Alberto Zamudio-Flores ,
Samir Dahmani  and
Günter Kompa
J. Alberto Zamudio-Flores*
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
Samir Dahmani
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
Günter Kompa
Affiliation:
FG Mikrowellenelektronik, University of Kassel, Wilhelmshoeher Allee 73, Kassel D-34121, Germany.
*
Corresponding author: J. Alberto Zamudio-Flores Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A reliable generally applicable extrinsic extraction algorithm is presented. It is based on pinch-off S-parameter measurements and on a scanning procedure to find the optimal capacitance distribution. Results of applying the algorithm with measured data of a GaN HEMT with gate width of 3.2-mm prove the consistency of the formulation. Successful model verification is shown under pulsed-DC, single- and two-tone operations, showing accurate predictions versus measurements of IDS, Pout, gain, harmonics and IMD products.

Keywords

Gallium nitrideHigh electron-mobility transistor (HEMT)Nonlinear modelingSmall-signal modelingHigh-power devices
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 63 - 73
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Sheppard, S.T. et al. : High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates. IEEE Electron Device Lett., 20 (1999), 161–163.CrossRefGoogle Scholar
[2]Lee, C.; Saunier, P.; Jinwei, Y.; Khan, M.A.: AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz. IEEE Electron Device Lett., 24 (2003), 616–618.CrossRefGoogle Scholar
[3]Wu, Y.-F. et al. : 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett., 25 (2004), 117–119.CrossRefGoogle Scholar
[4]Burm, J., Schaff, W.J., Eastman, L.F., Amano, H., Akasaki, I.: An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances. IEEE Trans. Electron Device, 44 (1997), 906–907.CrossRefGoogle Scholar
[5]Zarate-de Landa, A.; Zuniga-Juarez, J.; Loo-Yau, J.; Reynoso-Hernandez, J.; Maya-Sanchez, M.; del Valle-Padilla, J.: Advances in linear modeling of microwave transistors. IEEE Microwave Mag., 10 (2009), 100, 102–111, 146.CrossRefGoogle Scholar
[6]Jarndal, A.; Kompa, G.: A new small-signal modeling approach applied to GaN devices. IEEE Trans. Microwave Theory Tech., 53 (2005), 3440–3448.CrossRefGoogle Scholar
[7]Crupi, G. et al. : Accurate multibias equivalent-circuit extraction for GaN HEMTs. IEEE Trans. Microwave Theory Tech., 54 (2006), 3616–3622.CrossRefGoogle Scholar
[8]Chigaeva, E. et al. : Determination of small-signal parameters of GaN-based HEMTs, in Proc. IEEE/Cornell Conf. on High Performance Devices, 2000, 115–122.Google Scholar
[9]Chen, G., Kumar, V., Schwindt, R.S.; Adesida, I.: A low gate bias model extraction technique for AlGaN/GaN HEMTs. IEEE Trans. Microwave Theory Tech., 54 (2006), 2949–2953.CrossRefGoogle Scholar
[10]Brady, R.G.; Oxley, C.H.; Brazil, T.J.: An improved small-signal parameter-extraction algorithm for GaN HEMT devices. IEEE Trans. Microwave Theory Tech., 56 (2008), 1535–1544.CrossRefGoogle Scholar
[11]Nuttinck, S.; Gebara, E.; Laskar, J.; Shealy, J.; Harris, M.: Improved RF modeling techniques for enhanced AlGaN/GaN HFETs. IEEE Microwave Wirel. Compon. Lett., 13 (2003), 140–142.CrossRefGoogle Scholar
[12]Caddemi, A.; Crupi, G.; Donato, N.: Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K. IEEE Trans. Instrum. Meas., 55 (2006), 465–470.CrossRefGoogle Scholar
[13]Kompa, G.; Novotny, M.: Frequency-dependent measurement error analysis and refined FET model parameter extraction including bias-dependent series resistors, in Int. IEEE Workshop on Experimentally Based FET Device Modeling & Related Nonlinear Circuit Design, Kassel University, Department of High Frequency Engineering, July 1997, 6.1–6.16.Google Scholar
[14]Kompa, G.: Modeling of dispersive microwave FET devices using a quasi-static approach. Int. J. Microwave Millimeter Wave CAE, 5 (1995), 173–194.Google Scholar
[15]ADS 2008 Update 1. Advanced Design System, Agilent Technologies, Reference Manual, 2008.Google Scholar
[16]Filicori, F.; Vannini, G.; Santarelli, A.; Sanchez, A.M.; Tazon, A.; Newport, Y.: Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's. IEEE Trans. Microwave Theory Tech., 43 (1995), 2972–2981.CrossRefGoogle Scholar
[17]Dahmani, S.; Mengistu, E.S.; Kompa, G.: Electro-thermal modeling of large-size GaN HEMTs, in German Microwave Conf., Hamburg, March 10–12, 2008.Google Scholar
[18]Filippov, K.A.; Balandin, A.A.: Self-heating effects in GaN/AlGaN heterostructure field-effect transistors and device structure optimization. Nanotech, 3 (2003), 333–336. www.nsti.org, ISBN 0-9728422-2-5.Google Scholar
[19]Dahmani, S.; Mengistu, E.S.; Kompa, G.: Thermal model extraction of GaN HEMTs for large-signal modeling, in Third European Microwave Integrated Circuit Conf., Amsterdam, October 27–28, 2008, 226–229.CrossRefGoogle Scholar