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A 120 GHz FMCW radar frontend demonstrator based on a SiGe chipset

Published online by Cambridge University Press:  19 April 2012

Martin Jahn  and
Andreas Stelzer
Martin Jahn*
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
Andreas Stelzer
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
*
Corresponding author: M. Jahn Email: [email protected]
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Abstract

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz, which features silicon–germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114 and 130 GHz and a corresponding dual–transceiver (TRX) chip that supports monostatic and quasi-monostatic radar configurations. The cascode amplifiers used in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar frontend with on-board differential microstrip antennas was built on an RF substrate. FMCW radar measurements with frequency chirps from 116 to 123 GHz verified the functionality of the designed radar sensor.

Keywords

Circuit design and applicationRadar applicationFrequency-modulated continuous wave
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 309 - 315
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

REFERENCES

[1]http://www.dotfive.euGoogle Scholar
[2]Jahn, M.; Stelzer, A.; Hamidipour, A.: Highly integrated 79, 94, and 120-GHz SiGe radar frontends, in IEEE MTT-S Int. Microwave Symp. Digest 2010, May 2010, 1324–1327.CrossRefGoogle Scholar
[3]Jahn, M.; Hamidipour, A.; Tong, Z.; Stelzer, A.: A 120-GHz FMCW radar frontend demonstrator based on a SiGe chipset, in European Microwave Conf. (EuMC), October 2011, 519–522.CrossRefGoogle Scholar
[4]Schmalz, K.; Winkler, W.; Borngräber, J.; Debski, W.; Heinemann, B.; Scheytt, J.C.: A Subharmonic receiver in SiGe technology for 122 GHz sensor applications. IEEE J. Solid-State Circuits, 45 (9) (2010), 1644–1656.CrossRefGoogle Scholar
[5]Sun, Y.; Scheytt, C.J.: An integrated harmonic transmitter Front-end for 122 GHz FMCW/CW radar sensor, in European Microwave Integrated Circuits Conf. (EuMIC), October 2011, 97–100.Google Scholar
[6]Pfeiffer, U.R.; Öjefors, E.; Zhao, Y.: A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz, in IEEE ISSCC Digest Technical Papers, February 2010, 416–417.Google Scholar
[7]Heinemann, B.; et al. : SiGe HBT Technology with fT/fmax of 300GHz/500GHz and 2.0ps CML Gate Delay. IEDM Technical Digest 2010, December 2010, 688–691.Google Scholar
[8]Jahn, M.; Wagner, C.; Stelzer, A.: DC-Offset Compensation Concept for Monostatic FMCW Radar Transceivers. IEEE Microw. Wirel. Compon. Lett., 20 (9) (2010), 525–527.CrossRefGoogle Scholar
[9]Jahn, M.; Knapp, H.; Stelzer, A.: A 122-GHz SiGe-based signal-generation chip employing a fundamental-wave oscillator with capacitive feedback frequency enhancement. IEEE J. Solid-State Circuits, 46 (9) (2011), 2009–2020.CrossRefGoogle Scholar
[10]Wagner, C.; Forstner, H.-P.; Haider, G.; Stelzer, A.; Jaeger, H.: A 79-GHz radar transceiver with switchable TX and LO feedthrough in a silicon–germanium technology, in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), October 2008, 105–108.Google Scholar
[11]Wagner, C.; Feger, R.; Stelzer, A.; Haderer, A.; Fischer, A.; Jaeger, H.: A 77-GHz FMCW radar system based on an RF frontend manufactured in a silicon–germanium technology. Antennas Radar Wave Propag. (ARP), (2008), 74–79.Google Scholar
[12]Starzer, F.; Wagner, C.; Lukashevich, D.; Forstner, H.P.; Maurer, L.; Stelzer, A.: an area and phase noise improved 19-GHz down-converter VCO for 77-GHz automotive radar frontends in a SiGe Bipolar Production Technology, in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), October 2008, 113–116CrossRefGoogle Scholar
[13]Wagner, C.; Stelzer, A.; Jaeger, H.: PLL architecture for 77-GHz FMCW radar systems with highly-linear ultra-wideband frequency sweeps, in IEEE MTT-S IMS Microwave Symp. Digest 2006, June 2006, 399–402.CrossRefGoogle Scholar
[14]Haderer, A.; Wagner, C.; Feger, R.; Stelzer, A.: A 77-GHz FMCW front-end with FPGA and DSP support. Radar Symp., May 2008, 1–6.CrossRefGoogle Scholar
[15]Skolnik, M.I.: Introduction to Radar Systems, McGraw-Hill International Edition, Singapore, 2001.Google Scholar
[16]Feger, R.; Wagner, C.; Schuster, S.; Scheiblhofer, S.; Jaeger, H.; Stelzer, A.: A 77-GHz FMCW MIMO radar based on a SiGe single-chip transceiver. IEEE Trans. Microw. Theory Tech., 57 (5) (2009), 1020–1035.CrossRefGoogle Scholar