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7 - Growth points in thinking-for-speaking

Published online by Cambridge University Press:  07 January 2010

David McNeill
Affiliation:
Departments of Psychology and Linguistics, University of Chicago
Susan D. Duncan
Affiliation:
Departments of Psychology, University of Chicago; Laboratory for Cognitive Neuropsychology, National Yang Ming University, Taipei
David McNeill
Affiliation:
University of Chicago
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Summary

Introduction

Many bilingual speakers believe they engage in different forms of thinking when they shift languages. This experience of entering different thought worlds can be explained with the hypothesis that languages induce different forms of ‘thinking-for-speaking’ – thinking generated, as Slobin (1987) says, because of the requirements of a linguistic code. “‘Thinking for speaking’ involves picking those characteristics that (a) fit some conceptualization of the event, and (b) are readily encodable in the language” (p. 435). That languages differ in their thinking-for-speaking demands is a version of the linguistic relativity hypothesis, the proposition that language influences thought and that different languages influence thought in different ways.

Thinking-for-speaking differs from the so-called strong Whorfian version of the linguistic relativity hypothesis, as we understand it. The latter (Whorf 1956; Lucy & Wertsch 1987; Lucy 1992a, b) refers to general, langue-wide patterns of ‘habitual thought’, patterns that, according to the hypothesis, are embodied in the forms of the language and analogies among them. The thinking-for-speaking hypothesis, in contrast, refers to how speakers organize their thinking to meet the demands of linguistic encoding on-line, during acts of speaking – what Saussure (1959) termed parole rather than langue. The thinking-for-speaking version and the Whorfian version of the linguistic relativity hypothesis are not mutually exclusive, but neither are they identical. The distinction between them parallels the characterization of Whorf as ‘synchronic’ compared with Vygotsky (1987) as ‘diachronic’ that was offered by Lucy & Wertsch (1987). Following them, we will regard the thinking-for-speaking hypothesis as having a diachronic focus on thinking rather than a synchronic focus on habitual thought.

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Language and Gesture , pp. 141 - 161
Publisher: Cambridge University Press
Print publication year: 2000

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  • Growth points in thinking-for-speaking
    • By David McNeill, Departments of Psychology and Linguistics, University of Chicago, Susan D. Duncan, Departments of Psychology, University of Chicago; Laboratory for Cognitive Neuropsychology, National Yang Ming University, Taipei
  • Edited by David McNeill, University of Chicago
  • Book: Language and Gesture
  • Online publication: 07 January 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511620850.010
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  • Growth points in thinking-for-speaking
    • By David McNeill, Departments of Psychology and Linguistics, University of Chicago, Susan D. Duncan, Departments of Psychology, University of Chicago; Laboratory for Cognitive Neuropsychology, National Yang Ming University, Taipei
  • Edited by David McNeill, University of Chicago
  • Book: Language and Gesture
  • Online publication: 07 January 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511620850.010
Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • Growth points in thinking-for-speaking
    • By David McNeill, Departments of Psychology and Linguistics, University of Chicago, Susan D. Duncan, Departments of Psychology, University of Chicago; Laboratory for Cognitive Neuropsychology, National Yang Ming University, Taipei
  • Edited by David McNeill, University of Chicago
  • Book: Language and Gesture
  • Online publication: 07 January 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511620850.010
Available formats
×