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2 - Electronic Properties

Published online by Cambridge University Press:  06 July 2019

Jia-Ming Liu  and
I-Tan Lin
Jia-Ming Liu
Affiliation:
University of California, Los Angeles
I-Tan Lin
Affiliation:
Intel, California
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Graphene Photonics , pp. 27 - 65
Publisher: Cambridge University Press
Print publication year: 2018

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References

Hamaguchi, C., Basic Semiconductor Physics (Springer, 2009).Google Scholar
Davies, J. H., The Physics of Low-dimensional Semiconductors: An Introduction (Cambridge University Press, 1998).Google Scholar
Stauber, T., Peres, N. M. R., and Guinea, F., “Electronic transport in graphene: A semiclassical approach including midgap states,” Physical Review B, Vol. 76, 205423 (2007).Google Scholar
Adam, S., Hwang, E. H., and Das Sarma, S., “Scattering mechanisms and Boltzmann transport in graphene,” Physica E, Vol. 40, pp. 1022–1025 (2008).Google Scholar
Hwang, E. H. and Das Sarma, S., “Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layer,” Physical Review B, Vol. 77, 195412 (2008).CrossRefGoogle Scholar
Hong, X., Zou, K., and Zhu, J., “Quantum scattering time and its implications on scattering sources in graphene,” Physical Review B, Vol. 80, 241415 (2009).Google Scholar
Peres, N. M. R., “Colloquium: The transport properties of graphene: an introduction,” Review of Modern Physics, Vol. 82, pp. 2673–2700 (2010).Google Scholar
Peres, N. M. R., Guinea, F., and Castro Neto, A. H., “Electronic properties of disordered two-dimensional carbon,” Physical Review B, Vol. 73, 125411 (2006).CrossRefGoogle Scholar
Das Sarma, S., Adam, S., Hwang, E. H., and Rossi, E., “Electronic transport in two-dimensional graphene,” Review of Modern Physics, Vol. 83, pp. 407–470 (2011).Google Scholar
Aleiner, I. L. and Efetov, K. B., “Effect of disorder on transport in graphene,” Physical Review Letters, Vol. 97, 236801 (2006).Google Scholar
Lundstrom, M., Fundamentals of Carrier Transport (Cambridge University Press, 2009).Google Scholar
Hwang, E. H. and Das Sarma, S., “Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene,” Physical Review B, Vol. 77, 115449 (2008).Google Scholar
Fratini, S. and Guinea, F., “Substrate-limited electron dynamics in graphene,” Physical Review B, Vol. 77, 195415 (2008).Google Scholar
Wang, S. Q. and Mahan, G. D., “Electron scattering from surface excitations,” Physical Review B, Vol. 6, pp. 4517–4524 (1972).CrossRefGoogle Scholar
Konar, A., Fang, T., and Jena, D., “Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors,” Physical Review B, Vol. 82, 115452 (2011).CrossRefGoogle Scholar
Lin, I. T. and Liu, J. M., “Surface polar optical phonon scattering of carriers in graphene on various substrates,” Applied Physics Letters, Vol. 103, 081606 (2013).Google Scholar
Perebeinos, V. and Avouris, P., “Inelastic scattering and current saturation in graphene,” Physical Review B, Vol. 81, 195442 (2010).CrossRefGoogle Scholar
Fischetti, M. V., Neumayer, D. A., and Cartier, E. A., “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering,” Journal of Applied Physics, Vol. 90, pp. 4587–4608 (2001).Google Scholar
Feldman, D. W., Parker, J. H. Jr., Choyke, W. J., and Patrick, L., “Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R,” Physical Review, Vol. 173, pp. 787–793 (1968).Google Scholar
Geick, R., Perry, C. H., and Rupprecht, G., “Normal modes in hexagonal boron nitride,” Physical Review, Vol. 146, pp. 543–547 (1966).Google Scholar
Rode, D. L., “Electron mobility in direct-gap polar semiconductors,” Physical Review B, Vol. 2, pp. 1012–1024 (1970).Google Scholar
Basko, D. M., “Theory of resonant multiphonon Raman scattering in graphene,” Physical Review B, Vol. 78, 125418 (2008).Google Scholar
Bolotin, K. I., Sikes, K. J., Jiang, Z., et al., “Ultrahigh electron mobility in suspended graphene,” Solid State Communications, Vol. 146, pp. 351–355 (2008).Google Scholar
Mariani, E. and von Oppen, F., “Temperature-dependent resistivity of suspended graphene,” Physical Review B, Vol. 82, 195403 (2010).Google Scholar
Castro, E. V., Ochoa, H., Katsnelson, M. I., et al., “Limits on charge carrier mobility in suspended graphene due to flexural phonons,” Physical Review Letters, Vol. 105, 266601 (2010).Google Scholar
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., et al., “Giant intrinsic carrier mobilities in graphene and its bilayer,” Physical Review Letters, Vol. 100, 016602 (2008).CrossRefGoogle ScholarPubMed
Efetov, D. K. and Kim, P., “Controlling electron‒phonon interactions in graphene at ultrahigh carrier densities,” Physical Review Letters, Vol. 105, 256805 (2010).Google Scholar
Chen, J. H., Jang, C., Xiao, S., Ishigami, M., and Fuhrer, M. S., “Intrinsic and extrinsic performance limits of graphene devices on SiO2,” Nature Nanotechnology, Vol. 3, pp. 206–209 (2008).CrossRefGoogle ScholarPubMed
Bolotin, K. I., Sikes, K. J., Hone, J., Stormer, H. L., and Kim, P., “Temperature-dependent transport in suspended graphene,” Physical Review Letters, Vol. 101, 096802 (2008).CrossRefGoogle ScholarPubMed
Ponomarenko, L. A., Yang, R., Mohiuddin, T. M., et al., “Effect of a high-κ environment on charge carrier mobility in graphene,” Physical Review Letters, Vol. 102, 206603 (2009).Google Scholar
Kuzmenko, A. B., van Heumen, E., Carbone, F., and van der Marel, D., “Universal optical conductance of graphite,” Physical Review Letters, Vol. 100, 117401 (2008).Google Scholar
Chung, D., “Review graphite,” Journal of Materials Science, Vol. 37, pp. 1475–1489 (2002).Google Scholar
Lin, I. T. and Liu, J. M., “Terahertz frequency-dependent carrier scattering rate and mobility of monolayer and AA-stacked multilayer graphene,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, 8400108 (2014).Google Scholar

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