Electromigration in Metals: Fundamentals to Nano-Interconnects

Paul S. Ho; Chao-Kun Hu; Martin Gall; Valeriy Sukharev

doi:10.1017/9781139505819

Electromigration in Metals

Fundamentals to Nano-Interconnects

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Crossref Citations

This Book has been cited by the following publications. This list is generated based on data provided by Crossref.

Shahriari, Bijan and Najm, Farid N. 2023. Fast Electromigration Simulation for Chip Power Grids. p. 1.

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Zahedmanesh, Houman 2024. Electromigration in Nano-Interconnects: Determining Reliability Margins in Redundant Mesh Networks Using a Scalable Physical–Statistical Hybrid Paradigm. Micromachines, Vol. 15, Issue. 8, p. 956.

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Sukharev, V. Choy, J.-H. Kteyan, A. Shuster-Passage, J. Choi, S. and Gall, M. 2024. A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect Segments. p. 1.

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Paul S. Ho, University of Texas, Austin, Chao-Kun Hu, IBM T J Watson Research Center, New York, Martin Gall, GlobalFoundries, Valeriy Sukharev, Siemens Business

Publisher:: Cambridge University Press
Online publication date:: May 2022
Print publication year:: 2022
Online ISBN:: 9781139505819
DOI:: https://doi.org/10.1017/9781139505819

Subjects:: Engineering, Electronic, Optoelectronic Devices, and Nanotechnology, Materials Science

74.99 (GBP)

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Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

'… useful for graduate students in materials science and mechanical or electrical engineering … Recommended.'

J. Lambropoulos Source: Choice

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Electromigration in Metals

Fundamentals to Nano-Interconnects

This Book has been cited by the following publications. This list is generated based on data provided by Crossref.

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Contents

Electromigration in Metals
pp i-ii

Electromigration in Metals - Title page
pp iii-iii

Copyright page
pp iv-iv

Dedication
pp v-vi

Contents
pp vii-x

Preface
pp xi-xiv

1 - Introduction to Electromigration
pp 1-7

2 - Fundamentals of Electromigration
pp 8-33

3 - Thermal Stress Characteristics and Stress-Induced Void Formation in Aluminum and Copper Interconnects
pp 34-79

4 - Stress Evolution and Damage Formation in Confined Metal Lines under Electric Stressing
pp 80-126

5 - Electromigration in Cu Interconnect Structures
pp 127-202

6 - Scaling Effects on Microstructure of Cu and Co Nanointerconnects
pp 203-250

7 - Analysis of Electromigration-Induced Stress Evolution and Voiding in Cu Damascene Lines with Microstructure
pp 251-337

8 - Massive-Scale Statistical Studies for Electromigration
pp 338-379

9 - Assessment of Electromigration Damage in Large On-Chip Power Grids
pp 380-413

Index
pp 414-418

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Electromigration in Metals

Fundamentals to Nano-Interconnects

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