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6 - Cryogenic Power Electronics

Published online by Cambridge University Press:  11 May 2022

By
Zheyu Zhang ,
Fei (Fred) Wang ,
Ruirui Chen  and
Handong Gui
Edited by
Kiruba Haran ,
Nateri Madavan  and
Tim C. O'Connell
Kiruba Haran
Affiliation:
University of Illinois, Urbana-Champaign
Nateri Madavan
Affiliation:
NASA Aeronautics Mission Directorate, NASA
Tim C. O'Connell
Affiliation:
P.C. Krause & Associates
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Summary

Cryogenic power electronics enable the highly efficient ultra-dense power conversion systems that are critical for electrified aircraft propulsion (EAP) and have the potential to transform aircraft powertrain design. Much like superconducting electric machines, cryogenic power electronics offer benefits achieved through improved power device performance, reduced conductor electrical resistivity, and increased heat transfer temperature differential. In this chapter, key steps in the development of cryogenic power electronics are presented, from the component to the converter level. First, the characterization of critical components – including power devices and magnetics – at cryogenic temperature is introduced to establish the basic knowledge necessary for cryogenic design and optimization. Second, special considerations specific to cryogenic design, and trade and design studies for the cryogenic power stage and filter electronics are detailed. Finally, an example of a high-power cryogenically-cooled inverter system for an EAP application is illustrated, with safety considerations and the protection scheme highlighted.

Keywords

cryogenic power electronicssafetycryogenic device performanceMOSFETlow temperature electronicsfilter designwide-bandgap deviceinverter
Type
Chapter
Information
Electrified Aircraft Propulsion
Powering the Future of Air Transportation
 , pp. 150 - 189
Publisher: Cambridge University Press
Print publication year: 2022

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References

Amendment no. 3 to the NASA Research Announcement (NRA), “Research opportunities in aeronautics – 2015 (ROA-2015),” NNH14ZEA001N, 2015.Google Scholar
Garrett, J., Schupbach, R., Lostetter, A. B., and Mantooth, H. A., “Development of a DC motor drive for extreme cold environments,” presented at the IEEE Aerosp. Conf., Big Sky, MT, 2007, DOI: 10.1109/AERO.2007.352654.Google Scholar
Rajashekara, K. and Akin, B., “A review of cryogenic power electronics – status and applications,” in Proc. IEEE Int. Elect. Mach. & Drive Conf., Chicago, IL, May 2013, pp. 899–904.Google Scholar
Yang, S., “Cryogenic characteristics of IGBTs,” Ph.D. thesis, University of Birmingham, UK, 2005.Google Scholar
Singh, R. and Baliga, B. J., Cryogenic Operation of Silicon Power Devices. New York, NY: Springer Science and Business Media, 2012.Google Scholar
Jia, C., “Experimental investigation of semiconductor losses in cryogenic DC-DC converters,” Ph.D. thesis, University of Birmingham, UK, 2008.Google Scholar
Bourne, J. et al., “Ultra-wide temperature (–230°C to 130°C) DC-motor drive with SiGe asynchronous controller,” presented at the IEEE Aerosp. Conf., Big Sky, MT, 2008, DOI: 10.1109/AERO.2008.4526594.Google Scholar
Chen, S. et al., “Cryogenic and high temperature performance of 4H-SiC power MOSFETs,” in Proc. IEEE Appl. Power Electron. Conf., Long Beach, CA, May 2013, pp. 207–210.Google Scholar
Chailloux, T. et al., “SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices,” in Mater. Sci. Forum, vol. 778, pp. 1122–1125, 2014.Google Scholar
Chen, H. et al., “Cryogenic characterization of commercial SiC Power MOSFETs,” in Mater. Sci. Forum, vol. 821, pp. 777–780, 2015.Google Scholar
Kim, H., Lim, J., and Cha, H., “DC characteristics of wide-bandgap semiconductor field-effect transistors at cryogenic temperatures,” J. Korean Phys. Soc., vol. 56, no. 5, pp. 1523–1526, 2010.Google Scholar
Gui, H. et al., “Characterization of 1.2 kV SiC power MOSFETs at cryogenic temperatures,” presented at the 10th IEEE Energy Convers. Congr. & Expo., Portland, OR, 2018, DOI: 10.1109/ecce.2018.8557442.Google Scholar
Colmenares, J. et al., “Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Appl., Fayetteville, AL, November 2016, pp. 129–134.Google Scholar
Zhang, X.-F. et al., “Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation,” Chin. Phys. B, vol. 22, no. 1, 017202, 2013.Google Scholar
Katz, O., Horn, A., Bahir, G., and Salzman, J., “Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. carrier concentration dependent mobility,” IEEE Trans. Electron Dev, vol. 50, no. 10, pp. 2002–2008, 2003.Google Scholar
Chang, S.-J. et al., “Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors,” Jpn. J. Appl. Phys., vol. 55, no. 4, 044104, 2016.Google Scholar
Nuttinck, S. et al., “Cryogenic investigation of current collapse in AlGaN/GaN HFETS,” in Proc. Gallium Arsenide Appl. Symp., 2003, pp. 213–215.Google Scholar
Lin, C.-H. et al., “Transient pulsed analysis on GaN HEMTs at cryogenic temperatures,” IEEE Electron Device Lett., vol. 26, no. 10, pp. 710–712, 2005.Google Scholar
Cuerdo, R. et al., “The kink effect at cryogenic temperatures in deep submicron AlGaN/GaN HEMTs,” IEEE Electron Device Lett., vol. 30, no. 3, pp. 209–212, 2009.Google Scholar
Caiafa, A. et al., “IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison,” in Proc. IEEE Power Electron. Special. Conf., Aachen, Germany, November 2004, vol. 4, pp. 2960–2966.Google Scholar
Caiafa, A. et al., “Cryogenic study and modeling of IGBTs,” in Proc. IEEE Power Electron. Special. Conf., Acapulco, Mexico, June 2003, vol. 4, pp. 1897–1903.Google Scholar
Zhang, Z. et al., “Characterization of high-voltage high-speed switching power semiconductors for high frequency cryogenically-cooled application,” in Proc. IEEE Appl. Power Electron. Conf., Tampa, FL, March 2017, pp. 1964–1969.Google Scholar
Leong, K. K., Donnellan, B. T., Bryant, A. T., and Mawby, P. A., “An investigation into the utilisation of power MOSFETs at cryogenic temperatures to achieve ultra-low power losses,” in Proc. IEEE Energy Convers. Congr. and Expo., Atlanta, GA, September 2010, pp. 2214–2221.Google Scholar
Mueller, O., “Properties of high-power Cryo-MOSFETs,” in Proc. IEEE Ind. Appl. Conf., San Diego, CA, October 1996, vol. 3, pp. 1443–1448.Google Scholar
Chen, Y. et al., “Experimental investigations of state-of-the-art 650-V class power MOSFETs for cryogenic power conversion at 77K,” IEEE J. Electron. Devices Soc., vol. 6, no. 1, pp. 8–18, 2018.Google Scholar
Gui, H. et al. “Development of high-power switching frequency cryogenically cooled inverter for aircraft applications,” IEEE Trans. Power Electr., vol. 35, no. 6, pp. 5670–5682, 2020.Google Scholar
Zhang, Z. et al., “Characterization of wide bandgap device for cryogenically-cooled power electronics in aircraft applications,” presented at the 1st AIAA/IEEE Electric Aircraft Technol. Symp., Cincinnati, OH, July 2018, Paper AIAA 2018-5006.Google Scholar
Ahmad, N., “Carrier freeze-out effects in semiconductor devices,” J. Appl. Phys., vol. 61, no. 5, pp. 1905–1909, 1987.Google Scholar
Chen, M. et al., “The magnetic properties of the ferromagnetic materials used for HTS transformers at 77 K,” IEEE Trans. Appl. Supercond., vol. 13, no. 2, pp. 2313–2316, 2003.Google Scholar
Claassen, J., “Inductor design for cryogenic power electronics,” IEEE Trans. Appl. Supercond., vol. 15, no. 2, pp. 2385–2388, 2005.Google Scholar
Quach, H. P. and Chui, T. C., “Low temperature magnetic properties of Metglas 2714A and its potential use as core material for EMI filters,” Cryog., vol. 44, no. 6, pp. 445–449, 2004.Google Scholar
Gerber, S. S., Elbuluk, M. E., Hammoud, A., and Patterson, R. L., “Performance of high-frequency high-flux magnetic cores at cryogenic temperatures,” in Proc. 37th Intersociety Energy Convers. Eng. Conf., Washington, DC, July 2002, pp. 249–254.Google Scholar
Chen, R. et al., “Core characterization and inductor design investigation at low temperature,” presented at the. 10th IEEE Energy Convers. Congr. & Expo., Portland, OR, 2018, DOI: 10.1109/ecce.2018.8557779.Google Scholar
Zhang, Z. and Wang, F., “Driving and characterization of wide bandgap semiconductors for voltage source converter applications,” presented at the IEEE Workshop on Wide Bandgap Power Devices and Appl., Knoxville, TN, October 2014, DOI: 10.1109/WiPDA.2014.6964609.Google Scholar
Cressler, J. D., “Silicon bipolar transistor: a viable candidate for high speed applications at liquid nitrogen temperature,” Cryog., vol. 30, no. 12, pp. 1036–1047, 1990.Google Scholar
Dumke, W. P., “The effect of base doping on the performance of Si bipolar transistors at low temperatures,” IEEE Trans. Electron Devices, vol. 28, no. 5, pp. 494–500, 1981.Google Scholar
Singh, R. and Baliga, B., “Cryogenic operation of power bipolar transistors,” Solid State Electron., vol. 39, no. 1, pp. 101–108, 1996.Google Scholar
Stork, J., Harame, D. L., Mayerson, B., and Nguyen, T. N., “Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature,” IEEE Trans. Electron Devices, vol. 36, no. 8, pp. 1503–1509, 1989.Google Scholar
Woo, J., Plummer, J. D., and Stork, J., “Non-ideal base current in bipolar transistors at low temperatures,” IEEE Trans. Electron Devices, vol. 34, no. 1, pp. 130–138, 1987.Google Scholar
Gui, H. et al., “Review of power electronics components at cryogenic temperatures,” IEEE Trans. Power Electr., vol. 35, no. 5, pp. 5144–5156, 2020.Google Scholar
Clark, W. F. et al., “Low temperature CMOS-a brief review,” IEEE Trans. Compon. Packag. Manuf. Technol., vol. 15, no. 3, pp. 397–404, 1992.Google Scholar
Ghibaudo, G. and Balestra, F., “Low temperature characterization of silicon CMOS devices,” in Proc. Intl. Conf. on Microelectron., Nis, Serbia, September 1995, vol. 2, pp. 613–622.Google Scholar
Makiniemi, T. K. and Kosonen, P. J., “A low temperature pipelined analog-to-digital converter,” in Proc.8th IEEE Int. Conf. on Electron., Circuits and Syst., Malta, September 2001, vol. 2, pp. 849–852.Google Scholar
Okcan, B., Merken, P., Gielen, G., and Van Hoof, C., “A cryogenic analog to digital converter operating from 300 K down to 4.4 K,” Rev. Sci. Instrum., vol. 81, no. 2, 024702, 2010.Google Scholar
Balestra, F. and Ghibaudo, G., Device and Circuit Cryogenic Operation for Low Temperature Electronics. New York, NY: Springer Science and Business Media, 2013.Google Scholar
Chen, Y. et al., “Design for ASIC reliability for low-temperature applications,” NASA Jet Propulsion Lab., Pasadena, CA, Tech. Rep. 20060044221, 2005.Google Scholar
Dejenfelt, A. and Engström, O., “MOSFET mobility degradation due to interface-states, generated by Fowler-Nordheim electron injection,” Microelectron. Eng., vol. 15, no. 1–4, pp. 461–464, 1991.Google Scholar
Claeys, C. and Simoen, E., “The perspectives of silicon-on-insulator technologies for cryogenic applications,” J. Electrochem. Soc., vol. 141, no. 9, pp. 2522–2532, 1994.Google Scholar
Claeys, C. and Simoen, E., “Perspectives of silicon-on-insulator technologies for cryogenic electronics,” in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, New York, NY: Springer, 2000, pp. 233–247.Google Scholar
Simoen, E. and Claeys, C., “The cryogenic operation of partially depleted silicon-on-insulator inverters,” IEEE Trans. Electron Devices, vol. 42, no. 6, pp. 1100–1105, 1995.Google Scholar
Wang, Z. et al., “Design and performance evaluation of overcurrent protection schemes for silicon carbide (SiC) power MOSFETs,” IEEE Trans. Ind. Electron., vol. 61, no. 10, pp. 5570–5581, 2014.Google Scholar
Chambers, R., “The anomalous skin effect,” in Proc. Royal Soc. London A: Math. Phys. Eng. Sci., 1952, vol. 215, no. 1123, pp. 481–497.Google Scholar
Kaganov, M., Lyubarskiy, G. Y., and Mitina, A., “The theory and history of the anomalous skin effect in normal metals,” Phys. Rep., vol. 288, no. 1, pp. 291–304, 1997.Google Scholar
London, H., “Alternating current losses in superconductors of the second kind,” Phys. Lett., vol. 6, no. 2, pp. 162–165, 1963.Google Scholar
Maxwell, E., “Superconducting resonant cavities,” in Advances in Cryogenic Engineering, New York, NY: Springer, 1961, pp. 154–165.Google Scholar
Pippard, A., “The surface impedance of superconductors and normal metals at high frequencies: II. The anomalous skin effect in normal metals,” in Proc. Royal Soc. London A: Math. Phys. Eng. Sci., 1947, vol. 191, no. 1026, pp. 385–399.Google Scholar
Reuter, G. and Sondheimer, E., “The theory of the anomalous skin effect in metals,” in Proc. Royal Soc. London A: Math. Phys. Eng. Sci., 1948, vol. 195, no. 1042, pp. 336–364.Google Scholar
RTCA: Environmental Conditions and Test Procedures for Airborne Electronic/Electrical Equipment and Instruments, DO-160G1, December 2014.Google Scholar
Xue, J. and Wang, F., “A practical liquid-cooling design method for magnetic components of EMI filter in high power motor drives,” presented at the 8th IEEE Energy Convers. Congr. & Expo., Milwaukee, WI, September 2016, DOI: 10.1109/ECCE.2016.7854758.Google Scholar
Elbuluk, M. and Hammoud, A., “Power electronics in harsh environments,” in Proc. of the 40th IEEE Ind. Appl. Conf., Kowloon, Hong Kong, China, October 2005, vol. 2, pp. 1442–1448.Google Scholar
Faria, L., Passaro, A., Nohra, L., and d’Amore, R., “Influence of the cryogenic temperature and the BIAS voltage on the spontaneous polarization effect of X5R dielectric capacitors,” in Proc. Int. Refereed J. Eng. Sci., vol. 1, no. 1, pp. 14–21.Google Scholar
Hammoud, A., Gerber, S., Patterson, R. L., and MacDonald, T. L., “Performance of surface-mount ceramic and solid tantalum capacitors for cryogenic applications,” in Annual Report of the Conf. on Elect. Insul. and Dielectr. Phenom., October 1998, vol. 2, pp. 572–576.Google Scholar
Hammoud, A. and Overton, E., “Low temperature characterization of ceramic and film power capacitors,” in Proc. IEEE Conf. on Elect. Insul. and Dielectr. Phenom., Millbrae, CA, October 1996, vol. 2, pp. 701–704.Google Scholar
Pan, M.-J., “Performance of capacitors under DC bias at liquid nitrogen temperature,” Cryogenics, vol. 45, no. 6, pp. 463–467, 2005.Google Scholar
Patterson, R. L., Hammond, A., and Gerber, S. S., “Evaluation of capacitors at cryogenic temperatures for space applications,” in Conf. Record of the IEEE Int. Symp. on Elect. Insul., Arlington, VA, June 1998, vol. 2, pp. 468–471.Google Scholar
Teyssandier, F. and Prêle, D., “Commercially available capacitors at cryogenic temperatures,” presented at the 9th Int. Workshop on Low Temp. Electron., Guaruja, Brazil, June 2010, HAL: hal-00623399.Google Scholar

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