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4 - Temporal and spatial fluctuations in MOSFETs

Published online by Cambridge University Press:  17 December 2010

Márcio Cherem Schneider  and
Carlos Galup-Montoro
Márcio Cherem Schneider
Affiliation:
Universidade Federal de Santa Catarina, Brazil
Carlos Galup-Montoro
Affiliation:
Universidade Federal de Santa Catarina, Brazil
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Summary

This chapter deals with temporal and spatial fluctuations in electronic devices, with strong emphasis on MOSFETs. The spontaneous fluctuations over time of the current and voltage inside a device, which are basically related to the discrete nature of electric charge, are called electrical noise. Noise imposes minimum values for the input signals of amplifiers and other analog circuits.

Time-independent variations between identically designed devices in an integrated circuit due to the spatial fluctuations in the technological parameters and geometries are called mismatch. Since digital and analog integrated circuits often rely on the matched behavior between identically designed devices, mismatch affects the performance of most integrated circuits.

Mismatch (spatial fluctuation) and noise (temporal fluctuation) are accuracy-limiting factors, both depending on the fabrication process, device dimensions, temperature, and bias. The shrinkage of the MOSFET dimensions and the reduction in the supply voltage of advanced technologies have made the consideration of matching and noise even more important for analog design. Consequently, we have included a detailed presentation of mismatch and noise so that they can be considered in the subsequent study of the basic circuits and building blocks. This chapter begins with a short summary of the various sources of noise. The general model for drain-current fluctuations in MOSFETs is then introduced, and the fundamental thermal- and flicker-noise models are developed. Small-dimension and high-frequency effects on thermal noise are considered. Design-oriented models for thermal and flicker noise are then presented.

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Chapter
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CMOS Analog Design Using All-Region MOSFET Modeling , pp. 134 - 176
Publisher: Cambridge University Press
Print publication year: 2010

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