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4 - Temporal and spatial fluctuations in MOSFETs

Published online by Cambridge University Press:  17 December 2010

Márcio Cherem Schneider  and
Carlos Galup-Montoro
Márcio Cherem Schneider
Affiliation:
Universidade Federal de Santa Catarina, Brazil
Carlos Galup-Montoro
Affiliation:
Universidade Federal de Santa Catarina, Brazil
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Summary

This chapter deals with temporal and spatial fluctuations in electronic devices, with strong emphasis on MOSFETs. The spontaneous fluctuations over time of the current and voltage inside a device, which are basically related to the discrete nature of electric charge, are called electrical noise. Noise imposes minimum values for the input signals of amplifiers and other analog circuits.

Time-independent variations between identically designed devices in an integrated circuit due to the spatial fluctuations in the technological parameters and geometries are called mismatch. Since digital and analog integrated circuits often rely on the matched behavior between identically designed devices, mismatch affects the performance of most integrated circuits.

Mismatch (spatial fluctuation) and noise (temporal fluctuation) are accuracy-limiting factors, both depending on the fabrication process, device dimensions, temperature, and bias. The shrinkage of the MOSFET dimensions and the reduction in the supply voltage of advanced technologies have made the consideration of matching and noise even more important for analog design. Consequently, we have included a detailed presentation of mismatch and noise so that they can be considered in the subsequent study of the basic circuits and building blocks. This chapter begins with a short summary of the various sources of noise. The general model for drain-current fluctuations in MOSFETs is then introduced, and the fundamental thermal- and flicker-noise models are developed. Small-dimension and high-frequency effects on thermal noise are considered. Design-oriented models for thermal and flicker noise are then presented.

Type
Chapter
Information
CMOS Analog Design Using All-Region MOSFET Modeling , pp. 134 - 176
Publisher: Cambridge University Press
Print publication year: 2010

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References

Ziel, A, Noise in Solid State Devices and Circuits, New York: Wiley, 1986.Google Scholar
Gray, P. R. and Meyer, R. G., Analysis and Design of Analog Integrated Circuits, New York: Wiley, 1984.Google Scholar
Han, K., Shin, H., and Lee, K., “Analytical drain thermal noise current model valid for deep submicron MOSFETs,” IEEE Transactions on Electron Devices, vol. 51, no. 8, pp. 261–269, Aug. 2004.CrossRefGoogle Scholar
Galup-Montoro, C. and Schneider, M. C., MOSFET Modeling for Circuit Analysis and Design, Singapore: World Scientific, 2007.CrossRefGoogle Scholar
Enz, C. C. and Vittoz, E. A., Charge-Based MOS Transistor Modeling. The EKV Model for Low-Power and RF IC Design, Chichester: Wiley, 2006.CrossRefGoogle Scholar
Paasschens, J. C., Scholten, A. J., and Langevelde, R., “Generalization of the Klaassen–Prins equation for calculating the noise of semiconductor devices,” IEEE Transactions on Electron Devices, vol. 52, no. 11, pp. 2463–2472, Nov. 2005.CrossRefGoogle Scholar
Klaassen, F. M. and Prins, J., “Thermal noise of MOS transistors”, Philips Research Reports, vol. 22, pp. 505–514, 1967.Google Scholar
Hung, K. K., Ko, P. K., Hu, C., and Cheng, Y. C., “A physics-based MOSFET noise model for circuit simulators,” IEEE Transactions on Electron Devices, vol. 37, no. 5, pp. 1323–1333, May 1990.CrossRefGoogle Scholar
Principato, F. and Ferrante, G., “1/f noise decomposition in random telegraph signals using the wavelet transform,” Physica A, vol. 380, no. 7, pp. 75–97, July 2007.CrossRefGoogle Scholar
Arnaud, A., Very Large Time Constant Gm–C Filters, Ph.D. Thesis, Universidad de la Republica, Uruguay, 2004, http://eel.ufsc.br/~lci/work_doct.html.
Arnaud, A. and Galup-Montoro, C., “Consistent noise models for analysis and design of CMOS circuits,” IEEE Transactions on Circuits and Systems I, vol. 51, no. 10, pp. 1909–1915, Oct. 2004.CrossRefGoogle Scholar
Lee, T. H., The Design of CMOS Radio-Frequency Integrated Circuits, 2nd edn., New York: Cambridge University Press, 2004.Google Scholar
Hastings, A., The Art of Analog Layout, Upper Saddle River, NJ: Prentice Hall, 2001.Google Scholar
Lakshmikumar, K. R., Hadaway, R. A., and Copeland, M. A., “Characterization and modeling of mismatch in MOS transistors for precision analog design,” IEEE Journal of Solid-State Circuits, vol. 21, no. 6, pp. 1057–1066, Dec. 1986.CrossRefGoogle Scholar
Pelgrom, M. J. M., Duinmaijer, A. C. J., and Welbers, A. P. G., “Matching properties of MOS transistors,” IEEE Journal of Solid-State Circuits, vol. 24, no. 5, pp. 1433–1440, Oct. 1989.CrossRefGoogle Scholar
Ambegaokar, V., Reasoning about Luck: Probability and Its Uses in Physics, Cambridge: Cambridge University Press, 1996.CrossRefGoogle Scholar
Pelgrom, M. J. M., “Low-power CMOS data conversion,” in Low-Voltage/Low-Power Integrated Circuits and Systems, edited by Sánchez-Sinencio, E. and Andreou, A., New York: IEEE Press, 1999, pp. 432–484.Google Scholar
Pelgrom, M. J. M., Tuinhout, H. P., and Vertregt, M., “Transistor matching in analog CMOS applications,” IEDM Technical Digest, pp. 915–918, Dec. 1998.Google Scholar
Kinget, P. R., “Device mismatch: an analog design perspective,” Proceedings of IEEE ISCAS, 2007, pp. 1245–1248.Google Scholar
Annema, A.-J., Nauta, B., Langevelde, R., and Tuinhout, H., “Analog circuits in ultra-deep-submicron CMOS,” IEEE Journal of Solid-State Circuits, vol. 40, no. 1, pp. 132–143, Jan. 2005.CrossRefGoogle Scholar
Yang, H., Macary, V., Huber, J. L.et al., “Current mismatch due to local dopant fluctuations in MOSFET channel,” IEEE Transactions on Electron Devices, vol. 50, no. 11, pp. 2248–2254, Nov. 2003.CrossRefGoogle Scholar
Klimach, H., Galup-Montoro, C., Schneider, M. C., and Arnaud, A., “MOSFET mismatch modeling: a new approach,” IEEE Design and Test of Computers, vol. 23, no. 1, pp. 20–29, Jan.–Feb. 2006.CrossRefGoogle Scholar
Galup-Montoro, C., Schneider, M. C., Klimach, H., and Arnaud, A., “A compact model of MOSFET mismatch for circuit design,”IEEE Journal of Solid-State Circuits, vol. 40, no. 8, pp. 1649–1657, Aug. 2005.CrossRefGoogle Scholar
Tuinenga, P. W., SPICE: A Guide to Circuit Simulation and Analysis using PSpice, 3rd edn., Englewood Cliffs, NJ: Prentice Hall, 1995.Google Scholar
Krummenacher, F., “Matching analysis of analog circuits,” MOS Modeling and Parameter Extraction Group Meeting, Lausanne, May 2000, http://legwww.epfl.ch/ekv/mos-ak/lausanne/index.html.
O'Riordan, D., “Recommended Spectre Monte Carlo modeling methodology,” Version 1, Dec. 17, 2003, http://www.designers-guide.org/Modeling/.
Papathanasiou, K., “A designer's approach to device mismatch: theory, modeling, simulation techniques, scripting, applications and examples,” Journal of Analog Integrated Circuits and Signal Processing, vol. 48, no. 8, pp. 95–106, Aug. 2006.CrossRefGoogle Scholar
Kinget, P. R., “Device mismatch and tradeoffs in the design of analog circuits,” IEEE Journal of Solid-State Circuits, vol. 40, no. 6, pp. 1212–1224, June 2005.CrossRefGoogle Scholar
Kim, J, Jones, K. D, and Horowitz, M. A., “Fast, non-Monte-Carlo estimation of transient performance variation due to device mismatch,” Proceedings of DAC, 2007, pp. 440–443.Google Scholar

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