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Foreword

Published online by Cambridge University Press:  05 October 2010

E. F. Schubert
Affiliation:
AT&T Bell Laboratories, New Jersey
L. C. Feldman
Affiliation:
AT&T Bell Laboratories
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Summary

Technology revolutions mark their origin from a single breakthrough such as the demonstration of the transistor. Subsequent technological advances make the revolution a reality. The historical evolution from Si transistor to integrated circuits to high speed computers and telecommunications is one excellent example.

Active workers in the field know each advance represents a major expenditure of time and effort (really ‘blood and sweat’). Progress comes about in a competitive atmosphere involving creative ideas, personality forces and technology prognostications.

We are presently in the midst of the microelectronics revolution. Insatiable demands exist for greater data rates, for consumer electronics and for superior telecommunications. We envision a world of wireless communications, video transmissions and displays, and numerous applications of high speed data transmission. Satisfying this demand is the goal of current research.

For our field of microelectronics this means a systems analysis from the final product to the atomic configurations of the materials that make the product. This analysis itself is remarkable; we can precisely relate the macroscopic system properties – how fast will the system operate – to the microscopic atomic structure – where do the atoms sit in the solid.

Analysis of today's devices reveal the limitations of today's semiconductors – mostly silicon. Silicon has been the workhorse for the last thirty years. The ‘silicon community’ continues to squeeze all that is obtainable from this most robust and manufacturable semiconductor.

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Publisher: Cambridge University Press
Print publication year: 1993

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  • Foreword
  • E. F. Schubert, AT&T Bell Laboratories, New Jersey
  • Book: Doping in III-V Semiconductors
  • Online publication: 05 October 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511599828.001
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  • Foreword
  • E. F. Schubert, AT&T Bell Laboratories, New Jersey
  • Book: Doping in III-V Semiconductors
  • Online publication: 05 October 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511599828.001
Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • Foreword
  • E. F. Schubert, AT&T Bell Laboratories, New Jersey
  • Book: Doping in III-V Semiconductors
  • Online publication: 05 October 2010
  • Chapter DOI: https://doi.org/10.1017/CBO9780511599828.001
Available formats
×