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  1. Home
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  3. Doping in III-V Semiconductors
  • Cited by 193
Publisher:
Cambridge University Press
Online publication date:
October 2010
Print publication year:
1993
Online ISBN:
9780511599828
DOI:
https://doi.org/10.1017/CBO9780511599828
Subjects:
Physics and Astronomy, Condensed Matter Physics, Nanoscience and Mesoscopic Physics, Engineering, Electronic, Optoelectronic Devices, and Nanotechnology
Series:
Cambridge Studies in Semiconductor Physics and Microelectronic Engineering (1)
Information

Book description

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

Reviews

"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics....His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today

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