Book contents
- 2D MaterialsProperties and Devices
- Reviews
- 2D Materials
- Copyright page
- Contents
- Contributors
- Introduction
- Part I
- Part II
- 14 Electronic Properties and Strain Engineering in Semiconducting Transition Metal Dichalcogenides
- 15 Valley-Spin Physics in 2D Semiconducting Transition Metal Dichalcogenides
- 16 Electrical Transport in MoS2: A Prototypical Semiconducting TMDC
- 17 Optical Properties of TMD Heterostructures
- 18 TMDs – Optoelectronic Devices
- 19 Synthesis of Transition Metal Dichalcogenides
- 20 Defects in Two-Dimensional Materials
- Part III
- Index
- References
16 - Electrical Transport in MoS2: A Prototypical Semiconducting TMDC
from Part II
Published online by Cambridge University Press: 22 June 2017
By
Book contents
- 2D MaterialsProperties and Devices
- Reviews
- 2D Materials
- Copyright page
- Contents
- Contributors
- Introduction
- Part I
- Part II
- 14 Electronic Properties and Strain Engineering in Semiconducting Transition Metal Dichalcogenides
- 15 Valley-Spin Physics in 2D Semiconducting Transition Metal Dichalcogenides
- 16 Electrical Transport in MoS2: A Prototypical Semiconducting TMDC
- 17 Optical Properties of TMD Heterostructures
- 18 TMDs – Optoelectronic Devices
- 19 Synthesis of Transition Metal Dichalcogenides
- 20 Defects in Two-Dimensional Materials
- Part III
- Index
- References
- Type
- Chapter
- Information
- 2D MaterialsProperties and Devices, pp. 295 - 309Publisher: Cambridge University PressPrint publication year: 2017
References
16.5 References
Wilson, JA, Yoffe, AD. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv Phys. 1969 May; 18(73): 193–335.Google Scholar
Ye, JT, Zhang, YJ, Akashi, R, Bahramy, MS, Arita, R, Iwasa, Y. Superconducting dome in a gate-tuned band insulator. Science. 2012 November 30; 338(6111): 1193–6.CrossRefGoogle Scholar
Radisavljevic, B, Radenovic, A, Brivio, J, Giacometti, V, Kis, A. Single-layer MoS2 transistors. Nat Nanotechnol. 2011; 6(3): 147–50.Google Scholar
Kaasbjerg, K, Thygesen, KS, Jacobsen, KW. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys Rev B. 2012 March 23; 85(11): 115317.Google Scholar
Kaasbjerg, K, Thygesen, KS, Jauho, A-P. Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles. Phys Rev B. 2013; 87(23): 235312.Google Scholar
Ong, Z-Y, Fischetti, MV. Mobility enhancement and temperature dependence in top-gated single-layer MoS2. Phys Rev B. 2013; 88(16): 165316.Google Scholar
Jariwala, D, Sangwan, VK, Late, DJ, Johns, JE, Dravid, VP, Marks, TJ, et al. Band-like transport in high mobility unencapsulated single-layer MoS2 transistors. Appl Phys Lett. 2013; 102(17): 173107.Google Scholar
Baugher, B, Churchill, HOH, Yang, Y, Jarillo-Herrero, P. Intrinsic electronic transport properties of high quality monolayer and bilayer MoS2. Nano Lett. 2013; 13(9): 4212–16.CrossRefGoogle ScholarPubMed
Cui, X, Lee, G-H, Kim, YD, Arefe, G, Huang, PY, Lee, C-H, et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat Nanotechnol. 2015 April 27; 10: 534–40.CrossRefGoogle ScholarPubMed
Fivaz, R, Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys Rev. 1967; 163(3): 743–55.CrossRefGoogle Scholar
Radisavljevic, B, Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nat Mater. 2013; 12: 815–20.CrossRefGoogle Scholar
Rahman, A, Guo, J, Datta, S, Lundstrom, MS. Theory of ballistic nanotransistors. IEEE Trans Electron Devices. 2003 September; 50(9): 1853–64.Google Scholar
Liu, L, Kumar, SB, Ouyang, Y, Guo, J. Performance limits of monolayer transition metal dichalcogenide transistors. IEEE Trans Electron Devices. 2011; 58(9): 3042–7.Google Scholar
Yoon, Y, Ganapathi, K, Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 2011; 11: 3768–73.Google Scholar
Alam, K, Lake, RK. Monolayer transistors beyond the technology road map. IEEE Trans Electron Devices. 2012 December; 59(12): 3250–4.CrossRefGoogle Scholar
Chang, J, Register, LF, Banerjee, SK. Atomistic full-band simulations of monolayer MoS2 transistors. Appl Phys Lett. 2013 November 25; 103(22): 223509.CrossRefGoogle Scholar
Chang, JW, Register, LF, Banerjee, SK. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal–oxide–semiconductor field effect transistors. J Appl Phys. 2014 February; 115(8).Google Scholar
Liu, L, Lu, Y, Guo, J. On monolayer MoS2 field-effect transistors at the scaling limit. IEEE Trans Electron Devices. 2013; 60(12): 4133–9.CrossRefGoogle Scholar
Ma, N, Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys Rev X. 2014; 4(1): 011043.Google Scholar
Kadantsev, ES, Hawrylak, P. Electronic structure of a single MoS2 monolayer. Solid State Commun. 2012; 152(10): 909–13.Google Scholar
Li, X, Mullen, JT, Jin, Z, Borysenko, KM, Buongiorno Nardelli, M, Kim, KW. Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles. Phys Rev B. 2013; 87(11): 115418.Google Scholar
Zhou, W, Zou, X, Najmaei, S, Liu, Z, Shi, Y, Kong, J, et al. Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 2013; 13: 2615Google Scholar
Hong, J, Hu, Z, Probert, M, Li, K, Lv, D, Yang, X, et al. Exploring atomic defects in molybdenum disulphide monolayers. Nat Commun. 2015 February 19; 6: 6293.CrossRefGoogle ScholarPubMed
Komsa, H-P, Krasheninnikov, AV. Native defects in bulk and monolayer MoS2 from first principles. Phys Rev B. 2015 March 12; 91(12): 125304.Google Scholar
Earnshaw, A, Greenwood, N. Chemistry of the Elements, 2nd edn. (Elsevier, Amsterdam, 1997).Google Scholar
Lin, Y-C, Dumcenco, DO, Komsa, H-P, Niimi, Y, Krasheninnikov, AV, Huang, Y-S, et al. Properties of individual dopant atoms in single-layer MoS2: atomic structure, migration, and enhanced reactivity. Adv Mater. 2014 May 1; 26(18): 2857–61.Google Scholar
Zhu, W, Low, T, Lee, Y-H, Wang, H, Farmer, DB, Kong, J, et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat Commun. 2014; 5: 3087.Google Scholar
Yu, Z, Pan, Y, Shen, Y, Wang, Z, Ong, Z-Y, Xu, T, et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun. 2014 October 20; 5. http://www.nature.com/ncomms/2014/141020/ncomms6290/full/ncomms6290.htmlGoogle Scholar
Amani, M, Lien, D-H, Kiriya, D, Xiao, J, Azcatl, A, Noh, J, et al. Near-unity photoluminescence quantum yield in MoS2. Science. 2015 November 27; 350(6264): 1065–8.Google Scholar