1 results
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 6 / 2001
- Published online by Cambridge University Press:
- 13 June 2014, e11
- Print publication:
- 2001
-
- Article
-
- You have access
- HTML
- Export citation
-
InGaN alloys with (0001) or (000
) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is presented. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to explain the observations.
) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000