Before 2008, it was common knowledge around the world that insulation always saved air conditioning energy in buildings. In 2008 a phenomenon called anti-insulation was brought to light by Masoso & Grobler. They demonstrated that there are instances when insulation materials in a building directly increase building energy use. Researchers around the world then echoed the message. Recent work by some of the authors investigated the anti-insulation phenomenon in summer and winter for both hot climatic regions (Botswana) and cold climatic regions (Canada). Their study concluded that there is still a mystery of exaggerated sources of heat inside the building aggravating the anti-insulation phenomenon. They hypothesized that incident solar radiation through the windows could be one of the causes. This paper therefore focuses on eliminating direct solar radiation through windows by applying external shadings on a previously anti-insulation building. The energy saved is evaluated and the possible reversal of anti-insulation studied. The study is useful to energy policy makers and the building industry as it showcases the existence of a possible silent killer (anti-insulation) and demonstrates that investing large sums of money on insulation in buildings may not be the most economic thing to do in building design decisions.

Highly flexible, durable aerogels with textile feel were developed at Aspen Aerogels Inc. by sol-gel chemistry and supercritical CO2 solvent extraction. These polyisocyanate-based aerogels reinforced with battings showed little to no brittle fracture with repeated flexing. The crosslinker, the isocyanate content and functionality played an important role on properties such as thermal conductivity, durability and flexural modulus at ambient and cryogenic temperatures. The polyisocyanate aerogels crosslinked with polyamine showed thermal conductivities as low as 18 mW/m-K at ambient pressure and those crosslinked with polyol had low flexural modulus at cryogenic temperatures. Applications of these aerogels in aerospace and diving are presented.

This manuscript provides a bird’s eye view on energy in buildings. We discuss how energy policy leads to building standards that affect innovation in the building sector. We review current and future materials and solutions for the building envelope (insulation and glazing), renewable energy generation and energy storage, and demonstrate how the integration of buildings into district networks mitigates problems arising from a building’s, and its users’, dynamic behavior.

Buildings account for ∼40% of global energy demands, and the increased adoption of innovative solutions for buildings represents an enormous potential to reduce energy demands and greenhouse gas emissions. Here, we critically review the current and future materials and solutions for the construction sector. We describe how policy affects innovative businesses and the adoption of new products and solutions. We investigate how the building envelope and user behavior determine building energy demands. Compared to conventional solutions, superinsulation materials (vacuum insulation panels, silica aerogel) can achieve the same thermal performance with drastically thinner insulation. With low-emissivity coatings and appropriate filler gasses, double and triple glazing reduces thermal losses by an order of magnitude. Vacuum and aerogel glazing reduce these even further. Switchable glazing solutions maximize solar gains during wintertime and minimize illumination demands whilst avoiding overheating in summer. Upon integration of renewable energy systems, buildings become both producers and consumers of energy. Combined with the dynamic user behavior, temporal variations in energy production require thermal and electrical storage and the integration of buildings into smart grids and energy district networks. The combination of these measures can reduce the energy consumption of the building’s stock by a factor of three.

This paper describes the direct-foaming of plaster of Paris (CaSO4·½H2O) with up to 1.7 wt% of a nonionic surface-active agent to obtain highly porous, lightweight gypsum (CaSO4·2H2O) with 65–70% total porosity and a homogeneous, bimodal pore size distribution. Based on viscosity and temperature changes in the setting plaster of Paris slurry, the nonionic surfactant is seen to retard gypsum crystallization and thus extend the working time at higher water to solid ratios. The increase in viscosity during gypsum crystallization stabilizes the macropores formed during foaming. Gypsum foams of 32% density with a submicron matrix pore size, and relatively uniform macropore size of ∼100 µm were obtained. Seeding the process with 0.5 wt% 100 µm diameter gypsum particles accelerates gypsum crystallization in the presence of the nonionic surfactant and results in a more uniform, finer (92 µm) macropore structure due to less time for bubble coalescence.

Atomic-scale characterization of interfaces in ceramic materials is needed in order to fully understand their electronic, ionic, mechanical, magnetic, and optical properties. The latest development of laser-assisted atom probe tomography (APT), as well as new specimen preparation methods, have opened the realm of ceramics for structural and chemical characterization with high sensitivity and nearly atomic spatial resolution. This article reviews recent APT investigations of interfaces in thin nitride films and thermally grown oxides: TiAlN layers and oxide scales on alumina- and chromia-formers and Zr alloys. The selected examples highlight the role of interfaces in the decomposition of films and in transport processes.

The mobile revolution has enabled broad applications with a faster response, small form factors, and more data bandwidth, sensing, and processing power. The industry is pursuing three-dimensional (3D) stacked integrated circuits (ICs) in order to provide higher density interconnects between chips and/or functional blocks, which translates to enhanced system performance. These value propositions are attractive, especially for wireless applications, and will likely lead to further growth of this sector. Recent progress has been reported for development of IC stacking technologies, specifically for wireless applications. However, for full high volume deployment of 3D stacked ICs, a number of technical challenges remain, including many opportunities to be addressed by material enhancements. This article reviews the state-of-the-art technology solutions used for 3D IC stacking and highlights the material properties and remaining technology challenges required to meet the demanding specifications for high volume manufacturing of consumer devices. In particular, it focuses on the electrical (dielectrics and metallic) properties of the interconnects, the thermal and mechanical properties of the integrated components, and the ultimate component level/board level reliability characteristics.

The surface flashover behavior in ambient air and nitrogen are studied at a pressure of 1 kg/cm2 using optical emission spectroscopy. A high dc voltage is applied to Rogowski profile electrodes with polyoxymethylene as the insulator between the electrodes. Three different conditions of needle protrusion along the surface of polyoxymethylene are used to study the variation in spectral characteristics due to particle contamination. When the insulator is placed between the spark gap electrodes, the OES spectra are dominated by the Hα line in air and nitrogen medium. It was found that the intensity of N2+ (B-X) emission is less in air surrounding the insulator medium. The plasma temperature during bulk breakdown in air is 0.433 eV, which increases to 0.434 eV with the pressurized nitrogen, which further increases in the presence of insulator to 0.441 eV and 0.44 eV in nitrogen and air, respectively. The electron density is obtained from the N emission line at 746.8 nm and the estimated peak value is 2.85 × 1012 cm−3 in the presence of insulator. The plasma temperature decreases with increase in distance of particle contamination from cathode. The increase in electron density in air, as compared to nitrogen implies more material desorption in air which is also supported by the comparisons of Hα lines.

It is well established that symmetry has an important influence on the properties of materials, but the topology of electronic states might be an even more fundamental property. Topological insulators (TIs) are new states of matter based on the topology in the electronic band structure. Relativistic effects are the origin of the topologically non-trivial electronic structure, and the new state of matter has been realized in two-dimensional quantum well structures and three-dimensional bulk crystals of heavy elements and compounds. TI materials have an insulating gap in the bulk, and robust metallic edge/surface states on the boundary, which is robust against disorder and leads to unique spin and charge transport properties. Examples of TIs include HgTe/CdTe quantum wells, Bi-Sb-alloys, Bi2Se3, and half-Heusler compounds.

A wide class of materials that were discovered to carry a topologically protected phase order has led to a highly active area of research called topological insulators (TIs). This phenomenon has radically changed our thinking because of the robust quantum coherent behavior showing two-dimensional Dirac-type metallic surface states (SSs) and simultaneously insulating bulk states. The Dirac SSs are induced by the strong spin–orbit coupling as well as protected by time reversal symmetry (TRS). Breaking TRS in a TI with ferromagnetic perturbation can lead to many exotic quantum phenomena, such as the quantum anomalous Hall effect, topological magnetoelectric effect, as well as image magnetic monopole. This article presents an overview of the current status of TRS breaking in TIs and outlines the prospects for future studies.

This paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

Inkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

Semi-insulating (SI) silicon carbide (SiC) was evaluated as a candidate material for dielectric substrate for patch antennas suitable for monolithic antenna integration on a SiC semiconductor chip. Computer simulations of the return loss were conducted to design microstrip patch antennas operating at 10 GHz. The antennas were fabricated using SI 4H-SiC substrates, with Ti-Pt-Au stacks for ground planes and patches. A good agreement between the experimental results and simulation was obtained. The radiation performance of the designed SiC based patch antennas was as good as that normally achieved from antennas fabricated using conventional RF materials such as FR4 and Rogers. The antennas had the gain around 2 dBi at 10 GHz, which is consistent with the conventional antennas of a similar size.

Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46 stable cubic perovskites which was found to have a finite bandgap in a previous screening-study.1 The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change in the volume has an effect on the size of the bandgap. In addition, we suggest some new candidate materials that can be used as photocatalysts in one- and two-photon water splitting devices.

This study described a low-energy atom scattering system combined with a time-of-flight spectrometer and an ultra high vacuum chamber for insulator surface structural analysis. We show one of examples to study of MgO(111) surface analysis. A visual image of Mg atoms due to the projected blocking pattern represents the crystalline structure of the MgO(111) surfaces. This figure shows the trajectory of scattered 4He0 particles due to Mg atoms along low-index lattice planes and crystallographic directions. Insulator surface structural analysis becomes more important in materials sciences.

We present the studies of Terahertz (THz) Semiconductor-Insulator-Semiconductor (SIS) Planar Plasmonic waveguide of Indium Antimonide (InSb) with cavities along the waveguide acting as resonator. The Surface Plasmon Polariton (SPP) modes were confined in the SI interface and resonance behavior and filtering functionality of the device were demonstrated. The transmission characteristic of the structure depends on the interference effects between the SPP mode passing through the cavity and the one returning from the cavity. These effects were observed by studying the transmission from the SIS waveguide as a function of frequency and cavity length and proving analytically using the analogy with microwave transmission line network. Furthermore, we present the SIS cavity resonator’s transmission characteristics which vary with changes in the dielectric constant of the insulator region. Such a study was proposed to incorporate in the structure for sensing of biomolecules in THz region.

We present an investigation of the degree of oxidization of tungsten oxide (WOx) thin films used as gate dielectric for metal-insulator-semiconductor field-effect transistors (MISFET). By means of X-ray photoelectron spectroscopy WOx thin films grown by pulsed-laser deposition at room temperature were investigated. The electrical and optical properties depend significantly on the oxygen pressure during deposition and are affected by the stoichiometric ratio of oxygen and tungsten.

Aerogels are quasi-stable, low-density, three-dimensional assemblies of nanoparticles, but they are commonly associated with poor mechanical properties. The most successful efforts to improve their mechanical properties involve cross-linking of the skeletal nanoparticles with polymers. However, post gelation cross-linking is time-consuming. Hence, it is reasonable to seek robust all-polymer aerogels among polymers known for their high mechanical strength. As a result, here we report the facile one-pot synthesis of a new class of Kevlar-like aerogels based on the rather underutilized reaction of multifunctional isocyanates and carboxylic acids. The resulting materials are up to 84% v/v porous with surface areas as high as 380 m2 g-1. The ultimate compressive strength per unit density is within 10% equal to that of Kevlar 49. The high specific energy absorption (37 J g-1) and Styrofoam-like thermal conductivity (0.028 W m-1 K-1) combined with thermal stability up to 350 °C render aramid aerogels multifunctional materials suitable for defense, civil and transportation related applications. Upon pyrolysis at 800 °C they can be converted to 80% (v/v) porous, electrically conducting carbons with surface areas as high as 474 m2 g-1.

We have investigated characteristic ferroelectric and structural antiphase domain structures in single crystals of hexagonal RMnO3 (R=Y, Ho, Lu, and Yb) by obtaining various electron diffraction patterns, dark-filed images and high-resolution lattice images. In the ferroelectric phase of RMnO3 characteristic domain structures consisting of six ferroelectric and structural antiphase domains, which can be identified as the “cloverleaf” pattern, is found in the (110) plane, in addition to the (001) plane, and are inherent to the ferroelectric phase of hexagonal RMnO3. In domain configuration with the cloverleaf pattern in the (110) plane, the structural antiphase boundaries are inclined to be parallel to the [001] direction.

Organic thin-film transistors (OTFTs) using cross-linked olefin polymer as a gate insulator were fabricated on a plastic film. An olefin polymer layer was formed by spin-coating and baking at temperatures below 150°C. Pentacene was used as an organic semiconductor layer. The fabricated OTFTs with a short 5-μm-long channel showed a mobility of 0.1-0.2 cm2/Vs and a current ON/OFF ratio of 107. These OTFTs also exhibited good stable performance in the atmosphere. On the basis of the results, we fabricated a 5 inches OTFT-driven flexible active-matrix organic light emitting diode (AMOLED) display. The gate insulator, some metal wirings and electrodes on the OTFT backplane were formed on the plastic film by photolithography. After fabrication of the OTFT backplane, OLED layers were formed by vacuum deposition through a shadow-mask. Clear color moving images were observed on the flexible display even when it was bent.

In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. Our SOG film was deposited at temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. Also, analysis of surface roughness by AFM is presented. We demonstrated the use of SOG as gate insulator, fabricating and characterizing inverted staggered a-SiGe:H TFTs. The observed results are promising and suggest that SOG films deposited at 200°C in the Laboratory of Microelectronics of INAOE could be an alternative to improve electrical characteristics of TFTs on low temperature flexible substrates.