In this work, the metallic element Ru is introduced into a-Si:H. The structural and electrical properties of the films doped with Ru have been investigated. Raman spectra reveal that the addition of Ru disarranges further the intrinsically disordered amorphous network and generates more coordinated defects. Meanwhile, a new paramagnetic signal, associated with the holes localized in valence band tail, has been observed. Moreover, the conductivity increases by about nine orders of magnitude with the increase of doping concentration, and the temperature coefficient of resistance (TCR) results show that this material may have a potential application in the infrared detectors.

We analyze the accuracy and well-posedness of generalized impedanceboundary value problems in the framework of scattering problemsfrom unbounded highly absorbing media. We restrict ourselves in this first workto the scalar problem (E-mode for electromagnetic scattering problems). Compared to earlier works, the unboundedness of the rough absorbing layer introduces severe difficultiesin the analysis for the generalized impedance boundary conditions, sinceclassical compactness arguments are no longer possible. Our new analysisis based on the use of Rellich-type estimates and boundedness of L2solution operators. We also discuss some numerical experimentsconcerning these boundary conditions.