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Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e3
- Print publication:
- 1998
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- Article
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Extended defect reduction at the surface of GaN grown by lateral epitaxial overgrowth (LEO) on large-area GaN/Al2O3 wafers by low pressure MOCVD is demonstrated by atomic force microscopy. The overgrown GaN has a rectangular cross section with smooth (0001) and {11
0} facets. The density of mixed character threading dislocations at the surface of the LEO GaN is reduced by at least 3-4 orders of magnitude from that of bulk GaN. Dislocation-free GaN surfaces exhibit an anisotropic step structure that is attributed to the orientation dependence of the dangling bond density at the step edges.
0} facets. The density of mixed character threading dislocations at the surface of the LEO GaN is reduced by at least 3-4 orders of magnitude from that of bulk GaN. Dislocation-free GaN surfaces exhibit an anisotropic step structure that is attributed to the orientation dependence of the dangling bond density at the step edges.