An intra-band pattern-corrected decoupling vertical conducting wall is realized by dielectric substrate with conductor cladding on both side wall between two tightly spaced H-plane microstrip patches with λ0/20 edge-to-edge spacing. The wall is grounded and two symmetrical slots are etched on the vertical substrate. The measured results agree with the simulations, showing that the slotted vertical wall reduces the mutual coupling within the bandwidth to −30 dB and corrects the radiation beam tilt to be within −4.5° to 3° from the broadside direction. A gain reduction of 0.6 dB is observed compared to the gain without the slotted decoupling wall.
