Thin CdTe photovoltaic device efficiencies show significant improvement with the incorporation of a CdSeTe alloy layer deposited between a MgZnO emitter and CdTe absorber. CdTe and CdSeTe/CdTe devices fabricated by close-space sublimation with a total absorber thickness of 1.5 µm are studied using microscopy measurements and show minimal diffusion of Se into the CdTe. Current loss analysis shows that the CdSeTe layer is the primary absorber in the CdSeTe/CdTe structure, and fill factor loss analysis shows that ideality-factor reduction is the dominant mechanism of fill factor loss. Improvement in the CdSeTe/CdTe absorber quality compared to CdTe is also reflected in spectral and time-resolved photoluminescence measurements. Current density vs. voltage measurements show an increase in current density of up to 2 mA/cm2 with the addition of CdSeTe due to a band gap shift from 1.5 to 1.42 eV for CdTe and CdSeTe/CdTe absorbers respectively. Voltage deficit is lower with the incorporation of the CdSeTe layer, corroborated by improved electroluminescence intensity. The addition of CdSeTe into CdTe device structures has increased device efficiencies from 14.7% to 15.6% for absorbers with a total thickness less than two microns.

Hybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2/ZnO interface. Treated ZnO films yield electron mobilities close to 10-2 cm2/Vs and on/off current ratios of 104 while non-treated films have mobilities on the order of 10-5 cm2/Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors.

Increasing the band gap of cadmium telluride (CdTe) from 1.48 eV to > 2 eV can be achieved by alloying CdTe with ZnTe. Like CdTe, the alloyed films are expected to allow for low cost production, suggesting that Cd1-xZnxTe could be an ideal top cell for mass produced tandem devices. However, the CdCl2 activation of the alloyed films results in a significant loss of Zn, thereby reducing the bandgap. In this study, we demonstrate a novel CdCl2 activation method that does not result in significant Zn loss. By performing the activation step in a closed, inert environment we are able to avoid oxidation of the Zn in the Cd1-xZnxTe film; furthermore, by including sacrificial Zn in the container, an overpressure of ZnCl2 forms limiting the amount of ZnCl2 formed in the film. Both x-ray diffraction, optical measurements, and Auger spectroscopy show that the CdCl2 treatment with no flowing gas minimizes the loss of Zn from the CZT alloy.

We present some recently acquired results corresponding to the nature of the electron transport that occurs within bulk alloys of zinc-magnesium-oxide. These results are obtained using three-valley ensemble semi-classical Monte Carlo electron transport simulations. The impact that the magnesium content plays in shaping the form of the electron transport related characteristics associated with this alloy system is explored. Both steady-state and transient electron transport results are examined. The device implications of these results are then commented upon.

We have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifting of the hole spin and parity sublevels. This symmetry breaking, particularly for positively charged centers, shortens the radiative lifetime of CdSe nanocrystals even at room temperature, in qualitative agreement with the increase in PL efficiency observed in CdSe nanocrystals doped with positive Ag charge centers [A. Sahu et.al., Nano Lett. 12, 2587, (2012)]. The effect of the charged center on the photoluminescence and the absorption spectra is shown, with and without the presence of compensating charges on the nanocrystal surface. While spectra of individual nanocrystals are expected to shift and broaden with the introduction of a charged center, configuration averaging and inhomogeneous broadening are shown to wash out these effects. The presence of compensating charges at the NC surface also serves to stabilize the band edge transition energies relative to NCs with no charge centers.

Wide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of holes at the interface, which increased recombination and limits the VOC. This recombination should be exacerbated for wider bandgap absorbers such as CZT and CMT. In this study, we use numerical simulations with SCAPS-1D software to investigate the band alignment in the front contacts for wider bandgap CdTe based absorbers. Results show that by replacing the CdS with a wide bandgap emitter layer, the VOC can be greatly improved, though under certain conditions, the fill factor remains sensitive to the location of the emitter conduction band. As a result, different transparent front contacts were also investigated to determine a device structure required to produce a high performance CZT or CMT top-cell for tandems devices.

The Ga-doped ZnO (GZO) were deposited by magnetron reactive sputtering on glass substrates at room temperature with different deposited times to obtain various thickness. The root-mean-square (RMS) roughness obtained from the atomic force microscopy (AFM) images is observed to shift linearly with the deposited time, the fractal geometry and multi-resolution signal decomposition (MRSD) based on wavelet transform were applied on the surface profiles and the results does not synchronously changes as the thickness, which is related to the profile’s frequency. The calculated compressive in-plane stress of highly c-axis oriented GZO films also shows an irregular variation as the increase of film thickness, what’s more, the in-plane stress and fractal dimension exhibit a polynomial relationship and the two parameters can be used for describing the surface morphology.

Scintillation properties are often studied by photo-luminescence (PL) andscintillation measurements. In this work, we combine X-ray-induced luminescence(XRIL) spectroscopy [Review of Scientific Instruments 83, 103112 (2012)] with PLand standard scintillation measurements to give insight into the scintillationproperties of un-doped ZnO single crystals. XRIL revealed that ZnO luminescenceproportionally increases with X-ray power and exhibits excellent linearity -indicating the possibility of developing radiation detectors with good energyresolution. By coupling ZnO crystals to fast photomultiplier tubes andmonitoring the anode signal, rise times as fast as 0.9 ns were measured.

Substrate geometry CdTe solar cells have been modified with the addition of metal-catalysed nano-structures in order to influence their efficiency. Conditions for the growth of Au- and Bi-catalysed nanostructures were explored. The substrate devices themselves comprised indium tin oxide/CdS/CdTe/Mo foil and were developed using the MgCl2 alternative to the usual CdCl2 processing – this yielded open circuit voltages of up to 740 mV. It was demonstrated that the addition of Au-catalysed nanowires to 200 nm thick CdTe films on glass substrates decreased their optical transmission by 10%, this being significantly higher than for thick films. However, reproducibility issues with forming Bi nanostructures limited the device modification tests to the use of Au-catalysed wires, and these always acted to depress photovoltaic performance.

Two-Dimensional materials open up great prospects in photodetector applications owing to their sharp optical properties and the ability to combine them in layered heterostructures. Among this new class of materials, colloidal nanoplatelets (NPL) made of cadmium chalcogenides readily combine the thickness control at the atomic level together with the large scale production and ease of processing of colloidal materials. As a strategy to overcome the limited mobility inherent to nanocrystal based devices, the photocarrier lifetime is increased by building an electrolyte-gated phototransistor to passivate the electron traps. NPL can also be coupled with a graphene transport layer collecting the photogenerated charges, thus bypassing the transport bottleneck. We show that the charge transfer is driven by the large exciton binding energy of the NPL, which can be engineered by heterostructured NPL. This allows us to control the magnitude and the direction of the charge transfer to graphene. Eventually, we use nanotrench electrodes to decrease the transit time of the carriers, suppress the influence of film defects and provide an electric field large enough to overcome the large exciton binding energy of NPL.

We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the same defect was responsible for the inefficient doping and the formation of recombination centers in CdTe. This observation can be explained taking into account the effect of strain on the electronic properties of the grain boundary interface states in polycrystalline CdTe. In the conditions of strain, interaction of chlorine with the grain boundary point defects can be altered.

Pulsed metal organic chemical vapor deposition (PMOCVD) was used to grow high Mgcontent, high quality, wurtzite MgxZn1-xO (MgZnO)epitaxial film to realize photodetectors and emitters in the solar blindspectral window. MgZnO films with various Mg contents were deposited on c-planeAl2O3 with and without AlN buffer layer. The band gapof the films range from 3.24 eV to 4.49 eV, corresponding to fraction of Mgbetween x=0.0 to x=0.51, asdetermined by Rutherford backscattering spectroscopy (RBS). Cathodoluminescence(CL) measurement showed a linear blue shift in the spectral peak position ofMgxZn1-xO with an increase in x. Nomulti-absorption edge or CL band splitting was observed, indicating the phasepurity of the films and was confirmed by XRD analysis. The surface quality ofthe films has improved with the increase in Mg content. To the best of ourknowledge, the current result shows the highest Mg content(x=0.51), high quality, single phase wurtzite MgZnOepitaxial film ever grown by MOCVD. This is realized due to the non-equilibriumbehavior of PMOCVD in which radicals that are formed during the growth processwill have insufficient time to reach equilibrium.

ZnO nanorods were synthesized by recrystallization of ZnO thin films during multiannealing process. It was found that the obtained ZnO nanorods showed well-controlled grown direction. The periodical oxygen introducing between reducing annealing processes was effective to help on the oxidization reaction, result in the ZnO nanorods growth significantly. With controlling the annealing parameters, the morphologies of ZnO nanorods could be also controlled. The low-temperature (less than 420°C) initial reducing annealing process contributed to control the density of ZnO nanorods. The multi-annealing processes could reduce the ZnO thin film to produce ZnO nanorods efficiently. The structural, optical and electrical properties of the ZnO nanorods were investigated. Finally, the obtained ZnO nanorods used as photoelectrodes demonstrated in a dye-sensitized solar cell, the overall conversion efficiency of 3.65% was achieved.

The importance of ZnxMg1-xO is increasing day by day because of its wider bandgap than ZnO. This ternary semiconductor finds its application in the fields of optoelectronics, spintronics, superlattices due to its unique blueshifted UV-luminescent property. n- to p-type conduction which is the motive of the project can be achieved with increasing Mg content in ZnMgO. The optical characteristics of the nitrogen doped ZnxMg1-xO (x=0.85) grown on 2 inch Si <100>wafer by RF sputtering are studied and analyzed thoroughly using low temperature (15K) photoluminescence measurements. Nitrogen implantation was carried out by Plasma immersion Ion Implantation technique on the sample. Rapid Thermal Process was employed to remove defects resulting from implantation. The samples were annealed at 700°C, 800°C, 900°C, and 1000o C for 10 seconds in an oxygen ambient. Photoluminescence (PL) measurements were performed at low temperature (15K) which exhibited acceptor-bound-exciton peak (A°X) and donor-bound-acceptor pair (DAP) at 3.336 eV and 3.236 eV respectively. At 3.364 eV, S peak was found for the sample annealed at 800°C after implantation. This peak was attributed to the existence of ZnO-like composition. Localized and de-localized exciton peaks were found around 3.42 and 3.45 eV respectively. This result is very important because though dominant acceptor peak was not found but proper optimization of the parameters can lead to p-type ZnMgO which is the main motive of this project.

We present herein a joint physical/physico-chemical study and, more specifically, the first application of Matrix Assisted Laser Desorption Ionization coupled with Time of Flight Mass Spectrometry (MALDI-TOF-MS) to analyze small-sized ZnO quantum dots (QDs) (2.8-3.1 nm diameter range) synthesized by sol-gel chemistry and stabilized through an aminosilane coating. A careful investigation of the stability of ZnO QDs was initiated once these dots were dispersed in different media (water, biological buffer) for a period up to 3 weeks. Positive ion mode mass spectra MALDI-TOF-MS combined with optical spectrometry was used to monitor the stability of ZnO QDs when aging. Such a unique combination of MALDI-TOF-MS and physico-chemical techniques is likely to bring new insights into the structure analysis, the stability and consequently the potential toxicity of QDs.

In this work we have synthesized the colloidal particles of transition metal-hydroxide (M= Ni, Co, Mn, Fe) by a simple chemical precipitation method. The surface of spray deposited CdS thin films were modified using nano-colloids to utlize them as water oxidation catalysts (WOC) for the photoelectrochemical cell (PEC). A systematic comparison of the PEC performance of modified and unmodified film is carried out to understand the role of co-catalyst. Ni(OH)2 modification yields 3.4 times higher photocurrent density than bare CdS photoanode, and exhibits hydrogen-evolution rate of 600 μmol/hr. Fe(OH)2 modified film shows best stability of 8 hours as compared to the others.

CZT is a semiconductor material that promises to be a good candidate for uncooled gamma radiation detectors. However, to date, technological difficulties in production of large size defect-free CZT crystals are yet to be overcome. The most common problem is accumulation of tellurium precipitates as microscopic inclusions. These inclusions influence the charge collection through charge trapping and electric field distortion. The common work-around solutions are to fabricate pixelated detectors by either grouping together many small volume CZT crystals to act as individual detectors, or to deposit a pixelated grid of electrical contacts on a larger, but defective, crystal, and selectively collect charge. These solutions are satisfactory in an R&D environment, but are unsuitable for mass production and commercial development. Our modeling effort is aimed at quantifying the various contributions of tellurium inclusions in CZT crystals to the charge generation, transport, and collection, as a function of inclusions size, position, and concentration. We model the energy deposition of gamma photons in the sensitive volume of the detector using LANL’s MCNP code. The electron-hole pairs produced at the energy deposition sites are then transported through the defective crystal and collected as integral charge at the electrical contact sites using CERN’s Garfield software package. The size and position distribution of tellurium inclusions is modeled by sampling experimentally measured distributions of such inclusions on a variety of commercially-grown CZT crystals using IR microscopy and image processing software packages.

The cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by white light transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high-energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. Our approach allows for the first ever determination of hot carrier cooling rates, relevant in e.g. modeling of multiple exciton generation.

Cadmium Zinc Telluride (CZT), considered as a viable material for use in room temperature radiation detectors, has an undesired presence of tellurium inclusions in the bulk. Thermal treatment, in the form of annealing, has been utilized to test the viability of refining CZT into better detector material, either by the elimination of the tellurium inclusions or by the migration of the inclusions under a temperature gradient, but usually with a deterioration of electrical properties. We took infrared micrographs and current voltage (IV) characteristics of CZT samples prior to thermal treatment. We carried out 24-hour thermal treatments with a range of temperature from 100°C to 700°C to determine an optimal annealing temperature and to verify changes in the sizes, morphologies, and locations of the tellurium inclusions on the surfaces and within the crystal bulk of the CZT. The IV curves and resistivities prior to and after thermal treatments were compared, as were the infrared micrographs before and after annealing. Also, the changes in electrical properties of the samples with annealing conditions were compared against structural changes monitored at the same steps during the annealing process, in order to understand the effects of the thermal annealing to the radiation detector properties of the material. Correlations between the shape, size and position of inclusions and electrical properties of the material were attempted.

The path from conducting cutting-edge research in materials science to developing cutting-edge approaches for student engagement in STEM fields is a logical progression of a scientist’s professional interests. This pathway has led to creating an experimental approach to curricular and pedagogical materials development, dubbed Science Cartoons (Sci-Toons), based on Multimedia Learning Theoretical Framework (MLTF). Sci-Toons are developed by groups of students (STEM and non-STEM majors), STEM and non-STEM experts, and individuals with expertise in animations. The students are provided with technical training in animation, storytelling and science. This paper describes the creative process and design structure of Sci-Toons, shares selected animation projects, and provides data on the overall viewing impacts of Sci-Toons. The Sci-Toons initiative has offered a new venue for impacting students’ engagement in STEM.