Surface-sensitive information on a bulk sample can be obtained by using a low incident electron energy (low accelerating voltage/landing voltage) in a scanning electron microscope (SEM). However, topography and composition contrast obtained at low incident electron energies may not be intuitive and should be analyzed carefully. By combining an Auger electron spectrometer (AES) with a low incident electron energy SEM (LE-SEM), we investigated the SEM contrast carefully by separating the secondary electron (SE) and back-scattered electron (BSE) components with high accuracy. For this, we modified an AES to measure the electron energy in the range of 0–0.6 keV with a sample bias voltage of 0 to −0.3 keV. We could clearly observe reversed brightness of gold and carbon (graphite) in BSE images when the energy of the incident electrons was reduced to 0.2–0.3 keV. In addition, reflected electron energy spectroscopy (REELS) is known to be a tool for chemical state analysis of the sample. We demonstrated that it is possible to study the electron states of graphite, diamond, and graphene by acquiring low incident energy REELS spectra from their surfaces with the newly modified AES. This will be a new method for analyzing the electron states of local areas of a surface.

Deposition of Ti/N compositionally gradient film onto Ti-6Al-4V alloy substrates was carried out by reactive DC sputtering, not only to improve the blood compatibility of the alloy but also to relax the stress concentrated at the interface between the film and the alloy substrate. The compositional gradient was realized by varying continuously the nitrogen content in Ar-N2 sputter gas during deposition. In Auger electron spectroscopy (AES) analysis, Auger spectra were acquired in the N(E) mode using the beam brightness modulation (BBM) method to overcome the problem of the peak overlap of the principal Auger nitrogen transition peak (N-KLL) with one of titanium peaks (Ti-LMM). The deposited film appeared to be uniform and adhesive. TiN formation at the surface of the film was assumed, because of its yellow gold color and the X-ray diffraction (XRD) pattern for it. Under scanning electron microscopy, it was found that the surface had fine particles dispersed on a smooth accumulated deposit and that this depositing method improved the structural property of the film at the surface. According to AES in-depth profiles, the nitrogen (N) concentration in the film gradually decreased in the depth direction from the surface toward the alloy, confirming that a Ti/N compositionally gradient film had formed on the alloy substrate.

The kinetics of borosilicate glass film deposition on silicon using boron nitride as a solid source was investigated. Experimental data on the thickness of deposited films as a function of temperature and process times under controlled atmospheric conditions was obtained. A 33-kW rapid thermal processing infrared furnace was used to minimize temperature and gas phase transients experienced on the commercial scale. The thickness and composition of the borosilicate glass films were measured using scanning Auger spectroscopy, and the thickness of the films as a function of time for various temperatures are presented. The results suggest a rapid transition to diffusion-controlled deposition with an activation energy of 2.77 ± 0.5 eV. The partial pressure of water vapor was found to have a potentially significant effect on the rate of film growth.