11 results
Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2
-
- Journal:
- Journal of Materials Research / Volume 31 / Issue 7 / 14 April 2016
- Published online by Cambridge University Press:
- 28 January 2016, pp. 917-922
- Print publication:
- 14 April 2016
-
- Article
- Export citation
Thin Film Electronic Properties of Ternary Topological Insulator
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1393 / 2012
- Published online by Cambridge University Press:
- 18 May 2012, mrsf11-1393-l03-02
- Print publication:
- 2012
-
- Article
- Export citation
Role of Boron TED and Series Resistance in SiGe/Si Heterojunction pMOSFETs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1155 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1155-C02-05
- Print publication:
- 2009
-
- Article
- Export citation
A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C07-03
- Print publication:
- 2008
-
- Article
- Export citation
An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0994-F10-02
- Print publication:
- 2007
-
- Article
- Export citation
Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-16
- Print publication:
- 2007
-
- Article
- Export citation
Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 921 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0921-T07-09
- Print publication:
- 2006
-
- Article
- Export citation
Ab-Initio Study of Boron Diffusion Retardation in Si1-xGex
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C03-08
- Print publication:
- 2006
-
- Article
- Export citation
Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 872 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, J3.1
- Print publication:
- 2005
-
- Article
- Export citation
Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO2 Interface
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C8.5
- Print publication:
- 2004
-
- Article
- Export citation
The Pile-Ups Of Aluminum And Boron In The Sige(C)
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 737 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, F8.1
- Print publication:
- 2002
-
- Article
- Export citation