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Role of Boron TED and Series Resistance in SiGe/Si Heterojunction pMOSFETs

Published online by Cambridge University Press:  31 January 2011

Yonghyun Kim ,
Chang Yong Kang ,
Se-Hoon Lee ,
Prashant Majhi ,
Byoung-Gi Min ,
Ki-Seung Lee ,
Donghwan Ahn  and
Sanjay K. Banerjee
Yonghyun Kim
Affiliation:
[email protected], The University of Texas at Austin, Austin, Texas, United States
Chang Yong Kang
Affiliation:
[email protected], SEMATECH, Austin, Texas, United States
Se-Hoon Lee
Affiliation:
[email protected], The University of Texas at Austin, Austin, Texas, United States
Prashant Majhi
Affiliation:
[email protected], SEMATECH, Austin, Texas, United States
Byoung-Gi Min
Affiliation:
[email protected], JUSUNG America Inc., Round Rock, Texas, United States
Ki-Seung Lee
Affiliation:
[email protected], JUSUNG America Inc., Round Rock, Texas, United States
Donghwan Ahn
Affiliation:
[email protected], The University of Texas at Austin, Austin, Texas, United States
Sanjay K. Banerjee
Affiliation:
[email protected], The University of Texas at Austin, Austin, Texas, United States
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Abstract

We investigate boron transient enhanced diffusion (TED) and series resistance in SiGe/Si heterojunction channel pMOSFET. The stress gradient at the SiGe/Si interface near the gate edge in high Ge concentrations are found to determine boron TED as well as extension junction shape, which has a significant impact on the parasitic LDD and source/drain (S/D) series resistance. In addition, high Ge concentrations in the epitaxial SiGe layer on top of Si substrate result in a high sheet resistance during a 1000°C/5s rapid thermal processing (RTP), which is mainly due to alloy scattering and interface roughness scattering.

Keywords

dopantdiffusionSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C02-05
Copyright
Copyright © Materials Research Society 2009

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