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Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins

Published online by Cambridge University Press:  01 February 2011

Rownak J. Zaman ,
Weize Xiong ,
Rudy Quintanilla ,
Thomas Schulz ,
C. Rinn Cleavelin ,
Rick Wise ,
Mike Pas ,
Paul Patruno ,
Klaus Schruefer  and
Sanjay K. Banerjee
Rownak J. Zaman
Affiliation:
ATDF, 2706 Montopolis Drive, Austin, TX 78741, USA
Weize Xiong
Affiliation:
SiTD, Texas Instruments Inc., 13560 North Central Expressway, Dallas, TX 75243, USA
Rudy Quintanilla
Affiliation:
ATDF, 2706 Montopolis Drive, Austin, TX 78741, USA
Thomas Schulz
Affiliation:
Infineon Technologies, München, Germany
C. Rinn Cleavelin
Affiliation:
SiTD, Texas Instruments Inc., 13560 North Central Expressway, Dallas, TX 75243, USA
Rick Wise
Affiliation:
SiTD, Texas Instruments Inc., 13560 North Central Expressway, Dallas, TX 75243, USA
Mike Pas
Affiliation:
SiTD, Texas Instruments Inc., 13560 North Central Expressway, Dallas, TX 75243, USA
Paul Patruno
Affiliation:
SOITEC USA, 2 Centennial Drive, Peabody, MA 01960, USA
Klaus Schruefer
Affiliation:
Infineon Technologies, München, Germany
Sanjay K. Banerjee
Affiliation:
University of Texas at Austin, Microelectronics Research Center, Austin, TX 78758, USA
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Abstract

In this paper we present a comprehensive study of the impact of the Hydrogen (H2) annealing conditions on nano scale silicon fin structures. Hydrogen pressure was varied from 15Torr to 600Torr and anneal temperature was varied from 600°C to 900°C. We found H2 annealing can cause faceting, corner rounding and smoothing of the etched silicon surfaces. The degree of the fin transformation is a function of both pressure and temperature. Furthermore, low pressure and high temperature enhance the silicon movement and can cause damage to the nano scale fins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J3.1
Copyright
Copyright © Materials Research Society 2005

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